Abstract

The characteristics of high-voltage light-emitting diodes (HVLEDs) consisting of a 64-cell LED array were investigated by employing various LED structures. Two types of HVLED were examined: a standard HVLED with a single roughened indium tin oxide (ITO) surface grown on a sapphire substrate and a thin-film HVLED (TF-HVLED) with a roughened n-GaN and ITO double side transferred to a mirror/silicon substrate. At an injection current of 24 mA, the output powers of the HVLEDs fabricated using a sapphire substrate and those fabricated using a mirror/silicon substrate were 170 and 216 mW, respectively. Because the TF-HVLED exhibited improved thermal dissipation and light extraction, it produced a greater output power than the HVLED fabricated using the sapphire substrate did.

© 2014 Optical Society of America

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  1. K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
    [Crossref]
  2. C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic Carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
    [Crossref]
  3. R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “GaN light emitting diodes with wing-type imbedded contacts,” Opt. Express 21(S1Suppl 1), A1–A6 (2013).
    [Crossref] [PubMed]
  4. K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
    [Crossref]
  5. C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
    [Crossref]
  6. M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
    [Crossref]
  7. K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance,” J. Electrochem. Soc. 158(10), H988–H993 (2011).
    [Crossref]
  8. D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
    [Crossref]
  9. M. L. Tsai, J. H. Liao, J. H. Yeh, T. C. Hsu, S. J. Hon, T. Y. Chung, and K. Y. Lai, “High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm2.,” Opt. Express 21(22), 27102–27110 (2013).
    [Crossref] [PubMed]
  10. C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
    [Crossref]
  11. R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “Effects of cell distance on the performance of GaN high-voltage light emitting diode,” Electrochem. Solid-State Lett. 1(5), R21–R23 (2012).
    [Crossref]
  12. R. H. Horng, X. Zheng, C. Y. Hsieh, and D. S. Wuu, “Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector,” Appl. Phys. Lett. 93(2), 021125 (2008).
    [Crossref]
  13. R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
    [Crossref]

2013 (3)

K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
[Crossref]

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “GaN light emitting diodes with wing-type imbedded contacts,” Opt. Express 21(S1Suppl 1), A1–A6 (2013).
[Crossref] [PubMed]

M. L. Tsai, J. H. Liao, J. H. Yeh, T. C. Hsu, S. J. Hon, T. Y. Chung, and K. Y. Lai, “High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm2.,” Opt. Express 21(22), 27102–27110 (2013).
[Crossref] [PubMed]

2012 (1)

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “Effects of cell distance on the performance of GaN high-voltage light emitting diode,” Electrochem. Solid-State Lett. 1(5), R21–R23 (2012).
[Crossref]

2011 (2)

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance,” J. Electrochem. Soc. 158(10), H988–H993 (2011).
[Crossref]

2010 (1)

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

2009 (1)

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

2008 (2)

R. H. Horng, X. Zheng, C. Y. Hsieh, and D. S. Wuu, “Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector,” Appl. Phys. Lett. 93(2), 021125 (2008).
[Crossref]

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

2007 (1)

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

2006 (1)

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic Carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[Crossref]

2002 (1)

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]

Banas, M. A.

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

Bhat, J. C.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]

Chang, S. P.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Chang, W. T.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Chen, G. L.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

Chen, P. S.

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic Carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[Crossref]

Chhajed, S.

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

Chi, G. C.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

Chung, T. Y.

Collins, D.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]

Crawford, M. H.

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

DenBaars, S. P.

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Fischer, A. J.

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

Fletcher, R. M.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]

Holcomb, M. O.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]

Hon, S. J.

Horng, R. H.

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “GaN light emitting diodes with wing-type imbedded contacts,” Opt. Express 21(S1Suppl 1), A1–A6 (2013).
[Crossref] [PubMed]

K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
[Crossref]

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “Effects of cell distance on the performance of GaN high-voltage light emitting diode,” Electrochem. Solid-State Lett. 1(5), R21–R23 (2012).
[Crossref]

K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance,” J. Electrochem. Soc. 158(10), H988–H993 (2011).
[Crossref]

R. H. Horng, X. Zheng, C. Y. Hsieh, and D. S. Wuu, “Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector,” Appl. Phys. Lett. 93(2), 021125 (2008).
[Crossref]

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

Hsieh, C. Y.

R. H. Horng, X. Zheng, C. Y. Hsieh, and D. S. Wuu, “Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector,” Appl. Phys. Lett. 93(2), 021125 (2008).
[Crossref]

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

Hsu, T. C.

Hsu, W. H.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

Huang, S. H.

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

Huang, S. Y.

K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
[Crossref]

Iza, M.

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Ke, C. C.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Keller, S.

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Kim, J. K.

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

Koleske, D. D.

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

Kuo, H. C.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Kuo, H. T.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

Kuo, Y. W.

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “GaN light emitting diodes with wing-type imbedded contacts,” Opt. Express 21(S1Suppl 1), A1–A6 (2013).
[Crossref] [PubMed]

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “Effects of cell distance on the performance of GaN high-voltage light emitting diode,” Electrochem. Solid-State Lett. 1(5), R21–R23 (2012).
[Crossref]

Lai, K. Y.

Lee, C. S.

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic Carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[Crossref]

Lee, C. T.

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic Carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[Crossref]

Lee, C. Y.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Lee, S. R.

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

Li, J. C.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Li, Z. Y.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Liao, J. H.

Lin, D. W.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

Lin, W. Y.

K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
[Crossref]

Lu, T. C.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Ludowise, M. J.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]

Martin, P. S.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]

Nakamura, S.

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Ou, S. L.

K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance,” J. Electrochem. Soc. 158(10), H988–H993 (2011).
[Crossref]

Pai, S. F.

K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
[Crossref]

Rudaz, S.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]

Schubert, E. F.

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

Schubert, M. F.

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

Shen, C. C.

K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance,” J. Electrochem. Soc. 158(10), H988–H993 (2011).
[Crossref]

Shen, K. C.

K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
[Crossref]

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “GaN light emitting diodes with wing-type imbedded contacts,” Opt. Express 21(S1Suppl 1), A1–A6 (2013).
[Crossref] [PubMed]

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “Effects of cell distance on the performance of GaN high-voltage light emitting diode,” Electrochem. Solid-State Lett. 1(5), R21–R23 (2012).
[Crossref]

K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance,” J. Electrochem. Soc. 158(10), H988–H993 (2011).
[Crossref]

Steigerwald, D. A.

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]

Thaler, G.

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

Tsai, M. A.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

Tsai, M. L.

Vampola, K. J.

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

Wang, C. H.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Wang, S. C.

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Wen, K. S.

K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
[Crossref]

Wu, L. W.

K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
[Crossref]

Wuu, D. S.

K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
[Crossref]

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “GaN light emitting diodes with wing-type imbedded contacts,” Opt. Express 21(S1Suppl 1), A1–A6 (2013).
[Crossref] [PubMed]

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “Effects of cell distance on the performance of GaN high-voltage light emitting diode,” Electrochem. Solid-State Lett. 1(5), R21–R23 (2012).
[Crossref]

K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance,” J. Electrochem. Soc. 158(10), H988–H993 (2011).
[Crossref]

R. H. Horng, X. Zheng, C. Y. Hsieh, and D. S. Wuu, “Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector,” Appl. Phys. Lett. 93(2), 021125 (2008).
[Crossref]

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

Yang, H. C.

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

Yang, U. Z.

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic Carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[Crossref]

Yeh, J. H.

Zheng, X.

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

R. H. Horng, X. Zheng, C. Y. Hsieh, and D. S. Wuu, “Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector,” Appl. Phys. Lett. 93(2), 021125 (2008).
[Crossref]

Appl. Phys. Lett. (4)

K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]

C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]

M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, “Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes,” Appl. Phys. Lett. 91(23), 231114 (2007).
[Crossref]

R. H. Horng, X. Zheng, C. Y. Hsieh, and D. S. Wuu, “Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector,” Appl. Phys. Lett. 93(2), 021125 (2008).
[Crossref]

Electrochem. Solid-State Lett. (1)

R. H. Horng, K. C. Shen, Y. W. Kuo, and D. S. Wuu, “Effects of cell distance on the performance of GaN high-voltage light emitting diode,” Electrochem. Solid-State Lett. 1(5), R21–R23 (2012).
[Crossref]

IEEE Electron Device Lett. (2)

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron Device Lett. 32(8), 1098–1100 (2011).
[Crossref]

K. C. Shen, W. Y. Lin, D. S. Wuu, S. Y. Huang, K. S. Wen, S. F. Pai, L. W. Wu, and R. H. Horng, “An 83% enhancement in the external quantum efficiency of ultraviolet flip-chip light-emitting diodes with the incorporation of a self-textured oxide mask,” IEEE Electron Device Lett. 34(2), 274–276 (2013).
[Crossref]

IEEE J. Quantum Electron. (1)

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]

IEEE Photon. Technol. Lett. (1)

C. T. Lee, U. Z. Yang, C. S. Lee, and P. S. Chen, “White light emission of monolithic Carbon-implanted InGaN–GaN light-emitting diodes,” IEEE Photon. Technol. Lett. 18(19), 2029–2031 (2006).
[Crossref]

J. Electrochem. Soc. (1)

K. C. Shen, D. S. Wuu, C. C. Shen, S. L. Ou, and R. H. Horng, “Surface modification on wet-etched patterned sapphire substrates using plasma treatments for improved GaN crystal quality and LED performance,” J. Electrochem. Soc. 158(10), H988–H993 (2011).
[Crossref]

Opt. Express (2)

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Figures (7)

Fig. 1
Fig. 1 Fabrication flow of a single cell LED.
Fig. 2
Fig. 2 Schematic structure of the (a) TF-HVLEDs, (b) C-HVLEDs, and (c) encapsulated HVLEDs.
Fig. 3
Fig. 3 Optical microscope images of the (a) C-HVLEDs and (b) TF-HVLEDs.
Fig. 4
Fig. 4 I–V curves of the C-HVLED and TF-HVLED. The inset shows I–V curves of the single cell LED on a sapphire and a mirror/silicon substrate.
Fig. 5
Fig. 5 Plots of light output power and WPE against the injection current for the C-HVLED and TF-HVLED.
Fig. 6
Fig. 6 (a) EL emission peak wavelength as a function of the injection current for the C-HVLED and TF-HVLED. (b) EL spectra of both HVLEDs measured at 80 mA.
Fig. 7
Fig. 7 Surface temperature distributions of the C-HVLED and TF-HVLED at injection currents of (a and c) 24 mA and (b and d) 80 mA.

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

η W P E = P L V f I f = η E Q E E p h V f = η I Q E η L E E E p h V f × 100 %
( η W P E ) T F H V L E D ( η W P E ) C H V L E D = [ η I Q E η L E E E p h V f ] T F H V L E D [ η I Q E η L E E E p h V f ] C H V L E D

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