Abstract

We reported that the peak efficiency together with the efficiency droop in InGaN-based light emitting diodes could be effectively modified through a simple and low-cost etch-regrown process in n-GaN layer. The etched n-GaN template contained pyramid arrays with inclined side planes. The following lateral overgrowth process from the etched n-GaN template substantially reduced the edge dislocation density and residential compressive strain in epilayers. The efficiency droop of LED samples thus could be modified due to the reduced polarization field, resulting from the strain relaxation in epilayers. What is more, the peak efficiency and reverse current leakage were also modified due to the reduction of dislocations.

© 2014 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers

Kwang Jae Lee, Sang-Jo Kim, Jae-Joon Kim, Kyungwook Hwang, Sung-Tae Kim, and Seong-Ju Park
Opt. Express 22(S4) A1164-A1173 (2014)

Enhanced optical output performance in InGaN/GaN light-emitting diode embedded with SiO2 nanoparticles

Dae-Woo Jeon, Lee-Woon Jang, Han-Su Cho, Kyeong-Seob Kwon, Myeong-Ji Dong, A. Y. Polyakov, Jin-Woo Ju, Tae-Hoon Chung, Jong Hyeob Baek, and In-Hwan Lee
Opt. Express 22(18) 21454-21459 (2014)

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes

Jun Ho Son and Jong-Lam Lee
Opt. Express 18(6) 5466-5471 (2010)

References

  • View by:
  • |
  • |
  • |

  1. S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photon. 3(4), 180–182 (2009).
    [Crossref]
  2. S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward ‘lighting revolution’,” IEEE Photon. J. 4(2), 613–619 (2012).
    [Crossref]
  3. M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
    [Crossref]
  4. D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
    [Crossref]
  5. D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
    [Crossref]
  6. Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
    [Crossref]
  7. Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
    [Crossref] [PubMed]
  8. K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
    [Crossref]
  9. J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110(17), 177406 (2013).
    [Crossref] [PubMed]
  10. Y. Yang, X. A. Cao, and C. Yan, “Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes,” IEEE Trans. Electron Dev. 55(7), 1771–1775 (2008).
    [Crossref]
  11. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
    [Crossref]
  12. S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
    [Crossref]
  13. Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
    [Crossref]
  14. D. Zhu, A. N. Noemaun, M. F. Schubert, J. Cho, E. F. Schubert, M. H. Crawford, and D. D. Koleske, “Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping,” Appl. Phys. Lett. 96(12), 121110 (2010).
    [Crossref]
  15. J. Piprek and Z. M. Simon Li, “Sensitivity analysis of electron leakage in III-nitride light-emitting diodes,” Appl. Phys. Lett. 102(13), 131103 (2013).
    [Crossref]
  16. Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
    [Crossref]
  17. Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
    [Crossref]
  18. Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
    [Crossref]
  19. R. A. Arif, Y. K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett. 91(9), 091110 (2007).
    [Crossref]
  20. R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
    [Crossref]
  21. Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
    [Crossref]
  22. V. C. Su, P. H. Chen, R. M. Lin, M. L. Lee, Y. H. You, C. I. Ho, Y. C. Chen, W. F. Chen, and C. H. Kuan, “Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates,” Opt. Express 21(24), 30065–30073 (2013).
    [Crossref] [PubMed]
  23. J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
    [Crossref]
  24. K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi (a) 176(1), 535–543 (1999).
    [Crossref]
  25. K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
    [Crossref]
  26. C. Y. Cho, M. K. Kwon, I. K. Park, S. H. Hong, J. J. Kim, S. E. Park, S. T. Kim, and S. J. Park, “High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask,” Opt. Express 19(S4), A943–A948 (2011).
    [Crossref] [PubMed]
  27. A. Sakai, H. Sunakawa, and A. Usui, “Defect structure in selectively grown GaN films with low threading dislocation density,” Appl. Phys. Lett. 71(16), 2259–2261 (1997).
    [Crossref]
  28. K. S. Lee, Y.-S. Isnaeni, J.-H. Yoo, Y.-C. Lee, Kim, and Y.-H. Cho, “Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates,” J. Appl. Phys. 113(17), 173512 (2013).
  29. R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
    [Crossref]
  30. V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
    [Crossref]
  31. J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
    [Crossref]
  32. C. Y. Hsu, W. H. Lan, and Y. S. Wu, “Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes,” Appl. Phys. Lett. 83(12), 2447–2449 (2003).
    [Crossref]

2014 (5)

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

2013 (8)

J. Piprek and Z. M. Simon Li, “Sensitivity analysis of electron leakage in III-nitride light-emitting diodes,” Appl. Phys. Lett. 102(13), 131103 (2013).
[Crossref]

V. C. Su, P. H. Chen, R. M. Lin, M. L. Lee, Y. H. You, C. I. Ho, Y. C. Chen, W. F. Chen, and C. H. Kuan, “Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates,” Opt. Express 21(24), 30065–30073 (2013).
[Crossref] [PubMed]

K. S. Lee, Y.-S. Isnaeni, J.-H. Yoo, Y.-C. Lee, Kim, and Y.-H. Cho, “Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates,” J. Appl. Phys. 113(17), 173512 (2013).

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110(17), 177406 (2013).
[Crossref] [PubMed]

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

2012 (2)

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward ‘lighting revolution’,” IEEE Photon. J. 4(2), 613–619 (2012).
[Crossref]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
[Crossref]

2011 (2)

C. Y. Cho, M. K. Kwon, I. K. Park, S. H. Hong, J. J. Kim, S. E. Park, S. T. Kim, and S. J. Park, “High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask,” Opt. Express 19(S4), A943–A948 (2011).
[Crossref] [PubMed]

D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
[Crossref]

2010 (3)

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

D. Zhu, A. N. Noemaun, M. F. Schubert, J. Cho, E. F. Schubert, M. H. Crawford, and D. D. Koleske, “Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping,” Appl. Phys. Lett. 96(12), 121110 (2010).
[Crossref]

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

2009 (4)

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photon. 3(4), 180–182 (2009).
[Crossref]

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]

2008 (2)

Y. Yang, X. A. Cao, and C. Yan, “Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes,” IEEE Trans. Electron Dev. 55(7), 1771–1775 (2008).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

2007 (1)

R. A. Arif, Y. K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett. 91(9), 091110 (2007).
[Crossref]

2003 (1)

C. Y. Hsu, W. H. Lan, and Y. S. Wu, “Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes,” Appl. Phys. Lett. 83(12), 2447–2449 (2003).
[Crossref]

2000 (1)

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

1999 (1)

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi (a) 176(1), 535–543 (1999).
[Crossref]

1997 (2)

A. Sakai, H. Sunakawa, and A. Usui, “Defect structure in selectively grown GaN films with low threading dislocation density,” Appl. Phys. Lett. 71(16), 2259–2261 (1997).
[Crossref]

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

Arif, R. A.

R. A. Arif, Y. K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett. 91(9), 091110 (2007).
[Crossref]

Averkiev, N. S.

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

Bryan, Z.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Callsen, G.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Cao, X. A.

Y. Yang, X. A. Cao, and C. Yan, “Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes,” IEEE Trans. Electron Dev. 55(7), 1771–1775 (2008).
[Crossref]

Chang, J. Y.

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Chang, S. P.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Chen, J. R.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Chen, P. H.

Chen, W. F.

Chen, Y. C.

Cho, C. Y.

Cho, J.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
[Crossref]

D. Zhu, A. N. Noemaun, M. F. Schubert, J. Cho, E. F. Schubert, M. H. Crawford, and D. D. Koleske, “Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping,” Appl. Phys. Lett. 96(12), 121110 (2010).
[Crossref]

Cho, Y.-H.

K. S. Lee, Y.-S. Isnaeni, J.-H. Yoo, Y.-C. Lee, Kim, and Y.-H. Cho, “Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates,” J. Appl. Phys. 113(17), 173512 (2013).

Choi, J. W.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Collazo, R.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Crawford, M. H.

D. Zhu, A. N. Noemaun, M. F. Schubert, J. Cho, E. F. Schubert, M. H. Crawford, and D. D. Koleske, “Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping,” Appl. Phys. Lett. 96(12), 121110 (2010).
[Crossref]

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

Davydov, V. Y.

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

Delaney, K. T.

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]

Demir, H. V.

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
[Crossref]

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward ‘lighting revolution’,” IEEE Photon. J. 4(2), 613–619 (2012).
[Crossref]

DenBaars, S. P.

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward ‘lighting revolution’,” IEEE Photon. J. 4(2), 613–619 (2012).
[Crossref]

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photon. 3(4), 180–182 (2009).
[Crossref]

Dikme, Y.

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
[Crossref]

Ee, Y. K.

R. A. Arif, Y. K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett. 91(9), 091110 (2007).
[Crossref]

Farrell, R. M.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Fujito, K.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Goncharuk, I. N.

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

Haeger, D. A.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Han, S. H.

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

Han, Y. D.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Hasanov, N.

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Hiramatsu, K.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi (a) 176(1), 535–543 (1999).
[Crossref]

Ho, C. I.

Hoffmann, A.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Hoffmann, M. P.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Hong, S. H.

Hsu, C. Y.

C. Y. Hsu, W. H. Lan, and Y. S. Wu, “Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes,” Appl. Phys. Lett. 83(12), 2447–2449 (2003).
[Crossref]

Hsu, P. S.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Hwang, S.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Isnaeni, Y.-S.

K. S. Lee, Y.-S. Isnaeni, J.-H. Yoo, Y.-C. Lee, Kim, and Y.-H. Cho, “Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates,” J. Appl. Phys. 113(17), 173512 (2013).

Iveland, J.

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110(17), 177406 (2013).
[Crossref] [PubMed]

Iyechika, Y.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi (a) 176(1), 535–543 (1999).
[Crossref]

Jacobson, M. A.

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

Ji, Y.

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
[Crossref]

Ju, Z.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Ju, Z. G.

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
[Crossref]

Kang, J.

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

Kim,

K. S. Lee, Y.-S. Isnaeni, J.-H. Yoo, Y.-C. Lee, Kim, and Y.-H. Cho, “Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates,” J. Appl. Phys. 113(17), 173512 (2013).

Kim, D. Y.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Kim, J. J.

Kim, J. K.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Kim, M. H.

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Kim, S. T.

Kim, Y. S.

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

Kirste, R.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Koleske, D. D.

D. Zhu, A. N. Noemaun, M. F. Schubert, J. Cho, E. F. Schubert, M. H. Crawford, and D. D. Koleske, “Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping,” Appl. Phys. Lett. 96(12), 121110 (2010).
[Crossref]

Kuan, C. H.

Kuo, H. C.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Kuo, Y. K.

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Kure, T.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Kwon, M. K.

Kyaw, Z.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
[Crossref]

Lan, W. H.

C. Y. Hsu, W. H. Lan, and Y. S. Wu, “Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes,” Appl. Phys. Lett. 83(12), 2447–2449 (2003).
[Crossref]

Lee, K. S.

K. S. Lee, Y.-S. Isnaeni, J.-H. Yoo, Y.-C. Lee, Kim, and Y.-H. Cho, “Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates,” J. Appl. Phys. 113(17), 173512 (2013).

Lee, M. L.

Lee, S. M.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Lee, Y.-C.

K. S. Lee, Y.-S. Isnaeni, J.-H. Yoo, Y.-C. Lee, Kim, and Y.-H. Cho, “Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates,” J. Appl. Phys. 113(17), 173512 (2013).

Li, H.

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

Li, Z.

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

Lin, G. B.

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
[Crossref]

Lin, R. M.

Ling, S. C.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Liu, W.

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Liu, Z.

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

Lu, S.

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Lu, T. C.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Ma, P.

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

Maeda, T.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi (a) 176(1), 535–543 (1999).
[Crossref]

Martinelli, L.

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110(17), 177406 (2013).
[Crossref] [PubMed]

Meyaard, D.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Meyaard, D. S.

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
[Crossref]

Miyake, H.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi (a) 176(1), 535–543 (1999).
[Crossref]

Mizutani, H.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

Motogaito, A.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi (a) 176(1), 535–543 (1999).
[Crossref]

Nakamura, S.

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photon. 3(4), 180–182 (2009).
[Crossref]

Narukawa, M.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

Nelson, D. K.

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

Nenstiel, C.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Nikitina, I. P.

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

Nishiyama, K.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi (a) 176(1), 535–543 (1999).
[Crossref]

Noemaun, A. N.

D. Zhu, A. N. Noemaun, M. F. Schubert, J. Cho, E. F. Schubert, M. H. Crawford, and D. D. Koleske, “Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping,” Appl. Phys. Lett. 96(12), 121110 (2010).
[Crossref]

Onishi, M.

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

Park, I. K.

Park, J. H.

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

Park, S. E.

Park, S. J.

Park, Y.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Peretti, J.

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110(17), 177406 (2013).
[Crossref] [PubMed]

Pimputkar, S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photon. 3(4), 180–182 (2009).
[Crossref]

Piprek, J.

J. Piprek and Z. M. Simon Li, “Sensitivity analysis of electron leakage in III-nitride light-emitting diodes,” Appl. Phys. Lett. 102(13), 131103 (2013).
[Crossref]

Polkovnikov, A. S.

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

Rinke, P.

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]

Sakai, A.

A. Sakai, H. Sunakawa, and A. Usui, “Defect structure in selectively grown GaN films with low threading dislocation density,” Appl. Phys. Lett. 71(16), 2259–2261 (1997).
[Crossref]

Sakong, T.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Schubert, E. F.

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
[Crossref]

D. Zhu, A. N. Noemaun, M. F. Schubert, J. Cho, E. F. Schubert, M. H. Crawford, and D. D. Koleske, “Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping,” Appl. Phys. Lett. 96(12), 121110 (2010).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Schubert, M. F.

D. Zhu, A. N. Noemaun, M. F. Schubert, J. Cho, E. F. Schubert, M. H. Crawford, and D. D. Koleske, “Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping,” Appl. Phys. Lett. 96(12), 121110 (2010).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Semchinova, O. K.

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

Shan, Q.

D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
[Crossref]

Shim, H.

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
[Crossref]

Simon Li, Z. M.

J. Piprek and Z. M. Simon Li, “Sensitivity analysis of electron leakage in III-nitride light-emitting diodes,” Appl. Phys. Lett. 102(13), 131103 (2013).
[Crossref]

Sitar, Z.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Smirnov, A. N.

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

Sone, C.

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
[Crossref]

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Speck, J. S.

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110(17), 177406 (2013).
[Crossref] [PubMed]

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photon. 3(4), 180–182 (2009).
[Crossref]

Su, V. C.

Sun, X. W.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
[Crossref]

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward ‘lighting revolution’,” IEEE Photon. J. 4(2), 613–619 (2012).
[Crossref]

Sunakawa, H.

A. Sakai, H. Sunakawa, and A. Usui, “Defect structure in selectively grown GaN films with low threading dislocation density,” Appl. Phys. Lett. 71(16), 2259–2261 (1997).
[Crossref]

Tan, S. T.

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
[Crossref]

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward ‘lighting revolution’,” IEEE Photon. J. 4(2), 613–619 (2012).
[Crossref]

Tansu, N.

R. A. Arif, Y. K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett. 91(9), 091110 (2007).
[Crossref]

Tian, Y.

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

Tsai, M. C.

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Tweedie, J.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Usui, A.

A. Sakai, H. Sunakawa, and A. Usui, “Defect structure in selectively grown GaN films with low threading dislocation density,” Appl. Phys. Lett. 71(16), 2259–2261 (1997).
[Crossref]

Van de Walle, C. G.

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]

Wagner, M. R.

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

Wang, G.

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

Wang, L.

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Wang, S. C.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Weisbuch, C.

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110(17), 177406 (2013).
[Crossref] [PubMed]

Wu, Y. S.

C. Y. Hsu, W. H. Lan, and Y. S. Wu, “Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes,” Appl. Phys. Lett. 83(12), 2447–2449 (2003).
[Crossref]

Xu, J.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

Yan, C.

Y. Yang, X. A. Cao, and C. Yan, “Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes,” IEEE Trans. Electron Dev. 55(7), 1771–1775 (2008).
[Crossref]

Yang, Y.

Y. Yang, X. A. Cao, and C. Yan, “Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes,” IEEE Trans. Electron Dev. 55(7), 1771–1775 (2008).
[Crossref]

Yen, S. H.

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

Yi, X.

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

Yoo, J.-H.

K. S. Lee, Y.-S. Isnaeni, J.-H. Yoo, Y.-C. Lee, Kim, and Y.-H. Cho, “Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates,” J. Appl. Phys. 113(17), 173512 (2013).

Yoon, S.

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

You, Y. H.

Zhang, X.

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Zhang, Y.

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Zhang, Z. H.

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
[Crossref]

Zhao, Y.

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

Zhu, B.

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

Z. H. Zhang, W. Liu, S. T. Tan, Z. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes,” Opt. Express 22(S3), A779–A789 (2014).
[Crossref] [PubMed]

Zhu, D.

D. Zhu, A. N. Noemaun, M. F. Schubert, J. Cho, E. F. Schubert, M. H. Crawford, and D. D. Koleske, “Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping,” Appl. Phys. Lett. 96(12), 121110 (2010).
[Crossref]

Appl. Phys. Lett. (17)

M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
[Crossref]

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Y. K. Kuo, J. Y. Chang, M. C. Tsai, and S. H. Yen, “Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers,” Appl. Phys. Lett. 95(1), 011116 (2009).
[Crossref]

D. Zhu, A. N. Noemaun, M. F. Schubert, J. Cho, E. F. Schubert, M. H. Crawford, and D. D. Koleske, “Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping,” Appl. Phys. Lett. 96(12), 121110 (2010).
[Crossref]

J. Piprek and Z. M. Simon Li, “Sensitivity analysis of electron leakage in III-nitride light-emitting diodes,” Appl. Phys. Lett. 102(13), 131103 (2013).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, X. Zhang, L. Wang, Z. Kyaw, X. W. Sun, and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency,” Appl. Phys. Lett. 104(25), 251108 (2014).
[Crossref]

Z. H. Zhang, W. Liu, Z. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, L. Wang, X. W. Sun, and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers,” Appl. Phys. Lett. 104(24), 243501 (2014).
[Crossref]

R. A. Arif, Y. K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett. 91(9), 091110 (2007).
[Crossref]

R. M. Farrell, P. S. Hsu, D. A. Haeger, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes,” Appl. Phys. Lett. 96(23), 231113 (2010).
[Crossref]

Z. G. Ju, S. T. Tan, Z. H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer,” Appl. Phys. Lett. 100(12), 123503 (2012).
[Crossref]

K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]

D. S. Meyaard, G. B. Lin, J. Cho, E. F. Schubert, H. Shim, S. H. Han, M. H. Kim, C. Sone, and Y. S. Kim, “Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop,” Appl. Phys. Lett. 102(25), 251114 (2013).
[Crossref]

D. S. Meyaard, G. B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011).
[Crossref]

Z. H. Zhang, Y. Ji, W. Liu, S. T. Tan, Z. Kyaw, Z. Ju, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun, and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer,” Appl. Phys. Lett. 104(7), 073511 (2014).
[Crossref]

A. Sakai, H. Sunakawa, and A. Usui, “Defect structure in selectively grown GaN films with low threading dislocation density,” Appl. Phys. Lett. 71(16), 2259–2261 (1997).
[Crossref]

J. H. Park, D. Y. Kim, S. Hwang, D. Meyaard, E. F. Schubert, Y. D. Han, J. W. Choi, J. Cho, and J. K. Kim, “Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer,” Appl. Phys. Lett. 103(6), 061104 (2013).
[Crossref]

C. Y. Hsu, W. H. Lan, and Y. S. Wu, “Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes,” Appl. Phys. Lett. 83(12), 2447–2449 (2003).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

M. H. Crawford, “LEDs for solid-state lighting: performance challenges and recent advances,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1028–1040 (2009).
[Crossref]

IEEE Photon. J. (1)

S. T. Tan, X. W. Sun, H. V. Demir, and S. P. DenBaars, “Advances in the LED materials and architectures for energy-saving solid-state lighting toward ‘lighting revolution’,” IEEE Photon. J. 4(2), 613–619 (2012).
[Crossref]

IEEE Trans. Electron Dev. (1)

Y. Yang, X. A. Cao, and C. Yan, “Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes,” IEEE Trans. Electron Dev. 55(7), 1771–1775 (2008).
[Crossref]

J. Appl. Phys. (3)

K. S. Lee, Y.-S. Isnaeni, J.-H. Yoo, Y.-C. Lee, Kim, and Y.-H. Cho, “Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates,” J. Appl. Phys. 113(17), 173512 (2013).

R. Kirste, M. P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. R. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, “Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements,” J. Appl. Phys. 113(10), 103504 (2013).
[Crossref]

V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk, D. K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, “Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC,” J. Appl. Phys. 82(10), 5097–5102 (1997).
[Crossref]

J. Cryst. Growth (2)

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO),” J. Cryst. Growth 221(1), 316–326 (2000).
[Crossref]

J. Kang, Z. Li, Z. Liu, H. Li, Y. Zhao, Y. Tian, P. Ma, X. Yi, and G. Wang, “Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars,” J. Cryst. Growth 386(0), 175–178 (2014).
[Crossref]

J. Disp. Technol. (1)

Z. H. Zhang, S. T. Tan, Z. G. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, “On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes,” J. Disp. Technol. 9(4), 226–233 (2013).
[Crossref]

Nat. Photon. (1)

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photon. 3(4), 180–182 (2009).
[Crossref]

Opt. Express (3)

Phys. Rev. Lett. (1)

J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110(17), 177406 (2013).
[Crossref] [PubMed]

Phys. Status Solidi (a) (1)

K. Hiramatsu, K. Nishiyama, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, “Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: effects of reactor pressure in MOVPE growth,” Phys. Status Solidi (a) 176(1), 535–543 (1999).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1 (a) The schematic illustrations of the LED structures with etch-regrown n-GaN layers; (b) 45°-tilted SEM image of the GaN pillars formed from the n-GaN template after the traditional lithography process; (c) Plan-view SEM image of the GaN pyramids formed from the GaN pillars after the wet etching process.
Fig. 2
Fig. 2 The 20 × 20 μm AFM scans of the etched pyramid shaped n-GaN surface (a) and the n-GaN surface after regrown for 4 minutes (b), 8 minutes (c) and 28 minutes (d) from the pyramid shaped n-GaN layer. (d) the cross-sectional TEM image of the n-GaN layers after the etch-regrown process.
Fig. 3
Fig. 3 (a) Symmetric (002) and (b) asymmetric (102) X-ray rocking curves of the etch-regrown and reference n-GaN layers. (c) the peak position of the E2 (high) mode of the Raman spectra for the etch-regrown and reference n-GaN layers. From 1 to 20, the measurement position moves from the orientation flat to the other side of the wafer. (d) the typical room temperature Raman spectra of the etch-regrown and reference n-GaN layers.
Fig. 4
Fig. 4 The excitation dependent PL spectra measured at room temperature of LED samples with etch-regrown n-GaN (a) and reference n-GaN (b).
Fig. 5
Fig. 5 (a) The EQE and output power as a function of forward current for LEDs with reference and etch-regrown n-GaN. (b) the forward I-V curves of LEDs with reference and etch-regrown n-GaN. Inset shows the corresponding reverse I-V characteristics.

Metrics