Abstract

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of gain mirror structure, maximum output power values reach 7.1 W with intracavity diamond gain mirrors and 5.6 W with flip-chip gain mirrors, using a pump spot diameter of 300 µm, exhibiting a beam quality factor M2< 1.25 in the full operation range. These results confirm previously published theoretical modeling of these types of SDLs.

© 2014 Optical Society of America

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  1. J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
    [Crossref]
  2. A. Chamorovskiy, A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.38-µm mode-locked Raman fiber laser pumped by semiconductor disk laser,” Opt. Express 18(23), 23872–23877 (2010).
    [Crossref] [PubMed]
  3. J. Heikkinen, R. Gumenyuk, A. Rantamäki, T. Leinonen, M. Melkumov, E. M. Dianov, and O. G. Okhotnikov, “A 1.33 µm picosecond pulse generator based on semiconductor disk mode-locked laser and bismuth fiber amplifier,” Opt. Express 22(10), 11446–11455 (2014).
    [Crossref] [PubMed]
  4. S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
    [Crossref]
  5. http://www.lightpointe.com/images/Light Pointe How_to_Design_a_Reliable_FSO_System.pdf .
  6. A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
    [Crossref] [PubMed]
  7. J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
    [Crossref] [PubMed]
  8. A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).
  9. A. Rantamäki, A. Sirbu, E. J. Saarinen, J. Lyytikäinen, A. Mereuta, V. Iakovlev, E. Kapon, and O. G. Okhotnikov, “High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band,” Opt. Lett. 39(16), 4855–4858 (2014).
    [Crossref] [PubMed]
  10. S. L. Vetter and S. Calvez, “Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions,” IEEE J. Quantum Electron. 48(3), 345–352 (2012).
    [Crossref]
  11. J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
    [Crossref]
  12. E. Kühn, A. Thränhardt, C. Bückers, S. W. Koch, J. Hader, and J. V. Moloney, “Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 106(6), 063105 (2009).
    [Crossref]
  13. S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
    [Crossref]

2014 (4)

J. Heikkinen, R. Gumenyuk, A. Rantamäki, T. Leinonen, M. Melkumov, E. M. Dianov, and O. G. Okhotnikov, “A 1.33 µm picosecond pulse generator based on semiconductor disk mode-locked laser and bismuth fiber amplifier,” Opt. Express 22(10), 11446–11455 (2014).
[Crossref] [PubMed]

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

A. Rantamäki, A. Sirbu, E. J. Saarinen, J. Lyytikäinen, A. Mereuta, V. Iakovlev, E. Kapon, and O. G. Okhotnikov, “High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band,” Opt. Lett. 39(16), 4855–4858 (2014).
[Crossref] [PubMed]

2012 (1)

S. L. Vetter and S. Calvez, “Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions,” IEEE J. Quantum Electron. 48(3), 345–352 (2012).
[Crossref]

2011 (1)

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

2010 (3)

2009 (3)

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref] [PubMed]

E. Kühn, A. Thränhardt, C. Bückers, S. W. Koch, J. Hader, and J. V. Moloney, “Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 106(6), 063105 (2009).
[Crossref]

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

Bückers, C.

E. Kühn, A. Thränhardt, C. Bückers, S. W. Koch, J. Hader, and J. V. Moloney, “Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 106(6), 063105 (2009).
[Crossref]

Caliman, A.

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[Crossref]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref] [PubMed]

Calvez, S.

S. L. Vetter and S. Calvez, “Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions,” IEEE J. Quantum Electron. 48(3), 345–352 (2012).
[Crossref]

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

Chamorovskiy, A.

Civiš, S.

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

Dawson, M. D.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

Dianov, E. M.

Dorogan, A.

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

Ferus, M.

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

Guina, M.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

Gumenyuk, R.

Hader, J.

E. Kühn, A. Thränhardt, C. Bückers, S. W. Koch, J. Hader, and J. V. Moloney, “Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 106(6), 063105 (2009).
[Crossref]

Hastie, J. E.

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

Heikkinen, J.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

J. Heikkinen, R. Gumenyuk, A. Rantamäki, T. Leinonen, M. Melkumov, E. M. Dianov, and O. G. Okhotnikov, “A 1.33 µm picosecond pulse generator based on semiconductor disk mode-locked laser and bismuth fiber amplifier,” Opt. Express 22(10), 11446–11455 (2014).
[Crossref] [PubMed]

Iakovlev, V.

A. Rantamäki, A. Sirbu, E. J. Saarinen, J. Lyytikäinen, A. Mereuta, V. Iakovlev, E. Kapon, and O. G. Okhotnikov, “High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band,” Opt. Lett. 39(16), 4855–4858 (2014).
[Crossref] [PubMed]

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

Kapon, E.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

A. Rantamäki, A. Sirbu, E. J. Saarinen, J. Lyytikäinen, A. Mereuta, V. Iakovlev, E. Kapon, and O. G. Okhotnikov, “High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band,” Opt. Lett. 39(16), 4855–4858 (2014).
[Crossref] [PubMed]

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
[Crossref] [PubMed]

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[Crossref]

A. Chamorovskiy, A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.38-µm mode-locked Raman fiber laser pumped by semiconductor disk laser,” Opt. Express 18(23), 23872–23877 (2010).
[Crossref] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref] [PubMed]

Koch, S. W.

E. Kühn, A. Thränhardt, C. Bückers, S. W. Koch, J. Hader, and J. V. Moloney, “Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 106(6), 063105 (2009).
[Crossref]

Kühn, E.

E. Kühn, A. Thränhardt, C. Bückers, S. W. Koch, J. Hader, and J. V. Moloney, “Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 106(6), 063105 (2009).
[Crossref]

Laakso, A.

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

Leinonen, T.

Lyytikainen, J.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

Lyytikäinen, J.

Melkumov, M.

Mereuta, A.

A. Rantamäki, A. Sirbu, E. J. Saarinen, J. Lyytikäinen, A. Mereuta, V. Iakovlev, E. Kapon, and O. G. Okhotnikov, “High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band,” Opt. Lett. 39(16), 4855–4858 (2014).
[Crossref] [PubMed]

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[Crossref]

A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
[Crossref] [PubMed]

A. Chamorovskiy, A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.38-µm mode-locked Raman fiber laser pumped by semiconductor disk laser,” Opt. Express 18(23), 23872–23877 (2010).
[Crossref] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref] [PubMed]

Micovic, Z.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Moloney, J. V.

E. Kühn, A. Thränhardt, C. Bückers, S. W. Koch, J. Hader, and J. V. Moloney, “Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 106(6), 063105 (2009).
[Crossref]

Nevrlý, V.

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

Nikkinen, J.

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[Crossref]

Okhotnikov, O.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Okhotnikov, O. G.

J. Heikkinen, R. Gumenyuk, A. Rantamäki, T. Leinonen, M. Melkumov, E. M. Dianov, and O. G. Okhotnikov, “A 1.33 µm picosecond pulse generator based on semiconductor disk mode-locked laser and bismuth fiber amplifier,” Opt. Express 22(10), 11446–11455 (2014).
[Crossref] [PubMed]

A. Rantamäki, A. Sirbu, E. J. Saarinen, J. Lyytikäinen, A. Mereuta, V. Iakovlev, E. Kapon, and O. G. Okhotnikov, “High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band,” Opt. Lett. 39(16), 4855–4858 (2014).
[Crossref] [PubMed]

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
[Crossref] [PubMed]

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[Crossref]

A. Chamorovskiy, A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.38-µm mode-locked Raman fiber laser pumped by semiconductor disk laser,” Opt. Express 18(23), 23872–23877 (2010).
[Crossref] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref] [PubMed]

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

Pierscinski, K.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Ranta, S.

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

Rantamaki, A.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Rantamäki, A.

Rautiainen, J.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[Crossref]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref] [PubMed]

Saarinen, E. J.

Sirbu, A.

A. Rantamäki, A. Sirbu, E. J. Saarinen, J. Lyytikäinen, A. Mereuta, V. Iakovlev, E. Kapon, and O. G. Okhotnikov, “High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band,” Opt. Lett. 39(16), 4855–4858 (2014).
[Crossref] [PubMed]

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[Crossref]

A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
[Crossref] [PubMed]

A. Chamorovskiy, A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.38-µm mode-locked Raman fiber laser pumped by semiconductor disk laser,” Opt. Express 18(23), 23872–23877 (2010).
[Crossref] [PubMed]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref] [PubMed]

Suruceanu, G.

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

Tavast, M.

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

Thränhardt, A.

E. Kühn, A. Thränhardt, C. Bückers, S. W. Koch, J. Hader, and J. V. Moloney, “Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 106(6), 063105 (2009).
[Crossref]

Toikkanen, L.

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[Crossref]

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009).
[Crossref] [PubMed]

Vetter, S. L.

S. L. Vetter and S. Calvez, “Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions,” IEEE J. Quantum Electron. 48(3), 345–352 (2012).
[Crossref]

Volet, N.

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Zelinger, Z.

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

IEEE J. Quantum Electron. (1)

S. L. Vetter and S. Calvez, “Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions,” IEEE J. Quantum Electron. 48(3), 345–352 (2012).
[Crossref]

IEEE Photon. Technol. Lett. (1)

J. Rautiainen, J. Lyytikäinen, L. Toikkanen, J. Nikkinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-μm mode-locked disk laser with wafer fused gain and SESAM structures,” IEEE Photon. Technol. Lett. 22(11), 748–750 (2010).
[Crossref]

J. Appl. Phys. (1)

E. Kühn, A. Thränhardt, C. Bückers, S. W. Koch, J. Hader, and J. V. Moloney, “Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers,” J. Appl. Phys. 106(6), 063105 (2009).
[Crossref]

J. Quant. Spectrosc. Radiat. Transf. (1)

S. Civiš, Z. Zelinger, V. Nevrlý, A. Dorogan, M. Ferus, V. Iakovlev, A. Sirbu, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Near-infrared wafer-fused vertical-cavity surface-emitting lasers for HF detection,” J. Quant. Spectrosc. Radiat. Transf. 147(1), 53–59 (2014).
[Crossref]

Laser Photon. Rev. (1)

S. Calvez, J. E. Hastie, M. Guina, O. G. Okhotnikov, and M. D. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009).
[Crossref]

Opt. Express (4)

Opt. Lett. (1)

Photon. Technol.Lett. (1)

J. Lyytikainen, J. Rautiainen, A. Sirbu, V. Iakovlev, A. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. G. Okhotnikov, “High-Power 1.48 µm Wafer-Fused Optically Pumped Semiconductor Disk Laser,” Photon. Technol.Lett. 23(13), 917–919 (2011).
[Crossref]

Proc. SPIE (1)

A. Sirbu, K. Pierscinski, A. Mereuta, V. Iakovlev, A. Caliman, Z. Micovic, N. Volet, J. Rautiainen, J. Heikkinen, J. Lyytikainen, A. Rantamaki, O. Okhotnikov, and E. Kapon, “Wafer-fused VECSELs emitting in the 1310 nm waveband,” Proc. SPIE 8966, 8966OG (2014).

Other (1)

http://www.lightpointe.com/images/Light Pointe How_to_Design_a_Reliable_FSO_System.pdf .

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Figures (7)

Fig. 1
Fig. 1 Refractive index profile (green) and the calculated standing wave pattern of the electric field (blue) across the gain mirror structure.
Fig. 2
Fig. 2 Photoluminescence spectra of the 3-3-2-2 QWs gain structure at different temperatures, from 10 to 100°C (a), PL peak intensity variation with temperature (b), and PL peak wavelength vs. temperature (c).
Fig. 3
Fig. 3 Schematics of the initial fused gain mirror stack (a), intra-cavity diamond (b) and flip-chip (c) configurations.
Fig. 4
Fig. 4 Photoluminescence spectra of the fused sub-cavity at 20 to 80°C (left) and peak PL intensity variation with temperature (right).
Fig. 5
Fig. 5 Output power versus pump power for the flip-chip and intracavity diamond heat-spreading SDL configurations. Inset shows the schematics of the V-type laser configuration.
Fig. 6
Fig. 6 SDL spectra with an intracavity diamond gain mirror configuration at 3 pump power levels.
Fig. 7
Fig. 7 SDL spectra with a gain in flip-chip configuration at 3 pump power levels.

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