Abstract

We report on gallium (Ga) doped cubic MgZnO films, which have been grown by metal organic chemical vapor deposition. It was demonstrated that Ga doping improves the n-type conduction of the cubic MgZnO films. A two-orders of magnitude enhancement in lateral n-type conduction have been achieved for the cubic MgZnO films. The responsivity of the cubic MgZnO-based photodetector has been also enhanced. Depletion region electric field intensity enhanced model was adopted to explain the improvement of quantum efficiency in Ga doped MgZnO-based detectors.

© 2014 Optical Society of America

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References

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  1. M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
    [Crossref]
  2. G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
    [Crossref]
  3. E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
    [Crossref]
  4. M. R. Luettgen, J. H. Shapiro, and D. M. Reilly, “Non-line-of-sight single-scatter propagation model,” J. Opt. Soc. Am. A 8(12), 1964–1972 (1991).
    [Crossref]
  5. Z. Xu and B. M. Sadler, “Ultraviolet communications: potential and state-of-the-art,” IEEE Commun. Mag. 46, 67­73 (2008).
  6. Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
    [Crossref] [PubMed]
  7. T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
    [Crossref]
  8. C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
    [Crossref]
  9. G. Chen, F. Abou-Galala, Z. Y. Xu, and B. M. Sadler, “Experimental evaluation of LED-based solar blind NLOS communication links,” Opt. Express 16(19), 15059–15068 (2008).
    [Crossref] [PubMed]
  10. T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
    [Crossref]
  11. H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
    [Crossref]
  12. Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
    [Crossref]
  13. A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
    [Crossref]
  14. R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
    [Crossref]
  15. K. J. Li, H. D. Liu, Q. G. Zhou, D. McIntosh, and J. C. Campbell, “SiC avalanche photodiode array with microlenses,” Opt. Express 18(11), 11713–11719 (2010).
    [Crossref] [PubMed]
  16. P. Wang, Q. H. Zhen, Q. Tang, Y. T. Yang, L. X. Guo, K. Ding, and F. Huang, “Steady-state characteristics and transient response of MgZnO-based metal-semiconductor-metal solar-blind ultraviolet photodetector with three types of electrode structures,” Opt. Express 21(15), 18387–18397 (2013).
    [Crossref] [PubMed]
  17. Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
    [Crossref]
  18. S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
    [Crossref]
  19. Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
    [Crossref]
  20. S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
    [Crossref]
  21. L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
    [Crossref]
  22. L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
    [Crossref]
  23. G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
    [Crossref] [PubMed]
  24. S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
    [Crossref]
  25. X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
    [Crossref]
  26. L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
    [Crossref]
  27. X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
    [Crossref]
  28. J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
    [Crossref]
  29. S. M. Sze, Physics of Semiconductor Devices(Wiley, 1981.)
  30. T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
    [Crossref]
  31. J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
    [Crossref]
  32. S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
    [Crossref]

2013 (2)

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

P. Wang, Q. H. Zhen, Q. Tang, Y. T. Yang, L. X. Guo, K. Ding, and F. Huang, “Steady-state characteristics and transient response of MgZnO-based metal-semiconductor-metal solar-blind ultraviolet photodetector with three types of electrode structures,” Opt. Express 21(15), 18387–18397 (2013).
[Crossref] [PubMed]

2012 (1)

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

2011 (4)

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

2010 (6)

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

K. J. Li, H. D. Liu, Q. G. Zhou, D. McIntosh, and J. C. Campbell, “SiC avalanche photodiode array with microlenses,” Opt. Express 18(11), 11713–11719 (2010).
[Crossref] [PubMed]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref] [PubMed]

2009 (2)

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

2008 (5)

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

Z. Xu and B. M. Sadler, “Ultraviolet communications: potential and state-of-the-art,” IEEE Commun. Mag. 46, 67­73 (2008).

G. Chen, F. Abou-Galala, Z. Y. Xu, and B. M. Sadler, “Experimental evaluation of LED-based solar blind NLOS communication links,” Opt. Express 16(19), 15059–15068 (2008).
[Crossref] [PubMed]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

2007 (1)

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

2006 (1)

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

2005 (2)

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]

2003 (1)

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

2002 (2)

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

2001 (1)

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

1999 (1)

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

1996 (1)

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

1991 (1)

Abarkan, M.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Abou-Galala, F.

Ahaitouf, A.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Altukhov, A. A.

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

Alvarez, J.

Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]

Assouar, B.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Barkad, H. A.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Beck, A. L.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Benbakhti, B.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

BenMoussa, A.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Campbell, J. C.

K. J. Li, H. D. Liu, Q. G. Zhou, D. McIntosh, and J. C. Campbell, “SiC avalanche photodiode array with microlenses,” Opt. Express 18(11), 11713–11719 (2010).
[Crossref] [PubMed]

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Cao, J. M.

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

Chen, G.

Chen, H. Y.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

Chen, J.

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Chen, N. B.

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Chong, Y. M.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Choopun, S.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Chowdhury, U.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Collins, C. J.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

De Jaeger, J. C.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

DenBaars, S. P.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Ding, K.

Du, X.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Dupuis, R. D.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Fan, X. W.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Feshchenko, V. S.

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

Fini, P. T.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Fleischer, S. B.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Gautier, S.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Giordanengo, B.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Gokkavas, M.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Gorokhov, E. V.

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

Guo, L. X.

Hamady, S.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Han, S.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

Hochedez, J. F.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Hou, Y.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Huang, F.

Ibbetson, J. P.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Inal, A.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Jiang, D. Y.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Jiang, M.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Jiang, M. M.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

Ju, Z.

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Ju, Z. G.

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Kasu, M.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

Kawasaki, M.

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Keller, S.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Koide, Y.

Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]

Kokubun, Y.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Konstantatos, G.

G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref] [PubMed]

Kozodoy, P.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Lambert, D. J. H.

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Lee, S. T.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Li, B.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Li, B. H.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Li, K. J.

Li, T.

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Liao, M. Y.

Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]

Liu, H. D.

Liu, J. S.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

Liu, Z.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Luettgen, M. R.

Magunov, A. N.

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

Makimoto, T.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

Makino, T.

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Marchand, H.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Mattalah, M.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

McIntosh, D.

Mei, Z.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Mishra, U. K.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Moudakir, T.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Nakagomi, S.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Ohtomo, A.

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Ougazzaden, A.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Ozbay, E.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Parish, G.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Qiu, D. J.

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Razeghi, M.

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

Reilly, D. M.

Rogalski, A.

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

Sadler, B. M.

Salvestrini, J. P.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Sargent, E. H.

G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref] [PubMed]

Segawa, Y.

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Shan, C.

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Shan, C. X.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Shapiro, J. H.

Sharma, R. P.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Shen, D.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Shen, D. Z.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Shen, H.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Shen, W. Z.

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Soltani, A.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Srour, H.

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

Suzuki, R.

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

Tang, Q.

Taniyasu, Y.

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

Tarsa, E. J.

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

Tsukazaki, A.

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

Tut, T.

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

Venkatesan, T.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Vispute, R. D.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Wang, L.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Wang, L. K.

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Wang, P.

Wang, S.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Wang, S. P.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

Wong, M. M.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Wu, H. Z.

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Xie, X. H.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

Xu, Z.

Z. Xu and B. M. Sadler, “Ultraviolet communications: potential and state-of-the-art,” IEEE Commun. Mag. 46, 67­73 (2008).

Xu, Z. Y.

Yang, B.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Yang, C. L.

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

Yang, W.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

Yang, Y. T.

Yao, B.

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Zhang, J.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Zhang, J. Y.

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Zhang, T.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

Zhang, W. J.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

Zhang, Y.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Zhang, Z.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Zhang, Z. Z.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Zhao, D.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Zhao, D. X.

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

Zhao, H.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Zhao, Y.

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

Zhao, Y. M.

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

Zhen, Q. H.

Zheng, J.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Zhou, Q. G.

Zou, Y. S.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

ACS Appl. Mater. Interfaces (1)

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces 2(7), 1918–1921 (2010).
[Crossref]

Appl. Phys. Lett. (15)

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett. 98(10), 103506 (2011).
[Crossref]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett. 99(24), 242105 (2011).
[Crossref]

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Mg(x)Zn(1-x)O-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93(17), 173505 (2008).
[Crossref]

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, and C. X. Shan, “Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices,” Appl. Phys. Lett. 95(13), 131113 (2009).
[Crossref]

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett. 80(9), 1529–1531 (2002).
[Crossref]

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, and D. Z. Shen, “Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer,” Appl. Phys. Lett. 102(23), 231122 (2013).
[Crossref]

X. H. Xie, Z. Z. Zhang, C. X. Shan, H. Y. Chen, and D. Z. Shen, “Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction,” Appl. Phys. Lett. 101(8), 081104 (2012).
[Crossref]

T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Electron transport in ZnO thin films,” Appl. Phys. Lett. 87(2), 022101 (2005).
[Crossref]

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, and X. W. Fan, “High responsivity ultraviolet photodetector realized via a carrier-trapping process,” Appl. Phys. Lett. 97(25), 251102 (2010).
[Crossref]

G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, “High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN,” Appl. Phys. Lett. 75(2), 247–249 (1999).
[Crossref]

T. Tut, M. Gokkavas, A. Inal, and E. Ozbay, “AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain,” Appl. Phys. Lett. 90(16), 163506 (2007).
[Crossref]

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80(20), 3754–3756 (2002).
[Crossref]

H. Srour, J. P. Salvestrini, A. Ahaitouf, S. Gautier, T. Moudakir, B. Assouar, M. Abarkan, S. Hamady, and A. Ougazzaden, “Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices,” Appl. Phys. Lett. 99(22), 221101 (2011).
[Crossref]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J. C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J. F. Hochedez, “193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92(5), 053501 (2008).
[Crossref]

R. Suzuki, S. Nakagomi, and Y. Kokubun, “Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer,” Appl. Phys. Lett. 98(13), 131114 (2011).
[Crossref]

IEEE Commun. Mag. (1)

Z. Xu and B. M. Sadler, “Ultraviolet communications: potential and state-of-the-art,” IEEE Commun. Mag. 46, 67­73 (2008).

IEEE J. Quantum Electron. (1)

T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Dupuis, and J. C. Campbell, “Low-noise back-illuminated AlxGa1-xN-Based p-i-n solar-blind ultraviolet photodetectors,” IEEE J. Quantum Electron. 37(4), 538–545 (2001).
[Crossref]

Instrum. Exp. Tech. (1)

E. V. Gorokhov, A. N. Magunov, V. S. Feshchenko, and A. A. Altukhov, “Solar-blind UV flame detector based on natural diamond,” Instrum. Exp. Tech. 51(2), 280–283 (2008).
[Crossref]

J. Appl. Phys. (1)

M. Razeghi and A. Rogalski, “Semiconductor ultraviolet detectors,” J. Appl. Phys. 79(10), 7433–7473 (1996).
[Crossref]

J. Cryst. Growth (1)

L. K. Wang, Z. G. Ju, C. X. Shan, J. Zheng, B. H. Li, Z. Z. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and J. Y. Zhang, “Epitaxial growth of high quality cubic MgZnO films on MgO substrate,” J. Cryst. Growth 312(7), 875–877 (2010).
[Crossref]

J. Opt. Soc. Am. A (1)

J. Phys. Chem. C (1)

S. Han, J. Y. Zhang, Z. Z. Zhang, L. K. Wang, Y. M. Zhao, J. Zheng, J. M. Cao, B. Yao, D. X. Zhao, and D. Z. Shen, “Contact Properities of Au/Mg0.27Zn0.73O by different annealing processes,” J. Phys. Chem. C 114(49), 21757–21761 (2010).
[Crossref]

J. Phys. Condens. Matter (1)

J. Chen, W. Z. Shen, N. B. Chen, D. J. Qiu, and H. Z. Wu, “The study of composition non-uniformity in ternary MgZnO thin films,” J. Phys. Condens. Matter 15(30), L475–L482 (2003).
[Crossref]

Mater. Trans. (1)

Y. Koide, M. Y. Liao, and J. Alvarez, “Development of thermally stable, solar-blind deep-ultraviolet diamond photosensor,” Mater. Trans. 46(9), 1965–1968 (2005).
[Crossref]

Nat. Nanotechnol. (1)

G. Konstantatos and E. H. Sargent, “Nanostructured materials for photon detection,” Nat. Nanotechnol. 5(6), 391–400 (2010).
[Crossref] [PubMed]

Nature (1)

Y. Taniyasu, M. Kasu, and T. Makimoto, “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres,” Nature 441(7091), 325–328 (2006).
[Crossref] [PubMed]

Opt. Express (3)

Solid State Commun. (1)

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun. 149(45–46), 2021–2023 (2009).
[Crossref]

Other (1)

S. M. Sze, Physics of Semiconductor Devices(Wiley, 1981.)

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Figures (5)

Fig. 1
Fig. 1 (a) XRD pattern of the MgZnO films. No phase segregation is observed in both films. (b) Transmission spectrum taken from both films illustrating a bandgap of 4.77 eV, which is well within the solar-blind region.
Fig. 2
Fig. 2 XPS spectra of Ga-doped cubic MgZnO films.
Fig. 3
Fig. 3 (a) Schematic diagram of the MSM photodetectors. (b) I-V characteristics of the two photodetectors in dark. (c) Spectral response of the detectors at 10 V bias revealing that the devices are both blind to solar light. (d) The dependence of the maximum responsivity of the photodetectors on the external bias.
Fig. 4
Fig. 4 Energy-band diagram of the MSM photodetectors.
Fig. 5
Fig. 5 Simulations of the EFI distribution on MSM photodetectors (a) whole vision, (b) in vertical, and (c) in horizontal.

Equations (2)

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E 00 = ( q/2 ) ( N/m* ε s ) 1/2
I= I s exp( qV/n k B T )[ 1exp( qV/ k B T ) ] I s =A A n * T 2 exp(q ϕ B / k B T)

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