Room-temperature electroluminescence from Si microdisks with Ge quantum dots

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
[Crossref] [PubMed]

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[Crossref] [PubMed]

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[Crossref]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[Crossref]

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[Crossref]

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[Crossref]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[Crossref]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[Crossref]

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[Crossref]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[Crossref]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
[Crossref] [PubMed]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
[Crossref] [PubMed]

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[Crossref]

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[Crossref]

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
[Crossref] [PubMed]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[Crossref]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
[Crossref] [PubMed]

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[Crossref]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[Crossref]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[Crossref]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[Crossref]

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[Crossref]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[Crossref]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[Crossref]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[Crossref]

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[Crossref]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[Crossref]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[Crossref]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[Crossref]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[Crossref]

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[Crossref] [PubMed]

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[Crossref]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[Crossref]

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
[Crossref] [PubMed]

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[Crossref]

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[Crossref]

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[Crossref]

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[Crossref]

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[Crossref]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[Crossref]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[Crossref]

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[Crossref]

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[Crossref]

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[Crossref] [PubMed]

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[Crossref]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[Crossref]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[Crossref]

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[Crossref]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[Crossref]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[Crossref]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[Crossref]

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[Crossref]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[Crossref]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[Crossref]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[Crossref] [PubMed]

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[Crossref]

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[Crossref]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[Crossref]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[Crossref]

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[Crossref]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
[Crossref] [PubMed]

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[Crossref]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[Crossref]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
[Crossref] [PubMed]

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[Crossref] [PubMed]

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

D. K. Nayak, N. Usami, S. Fukatsu, and Y. Shiraki, “Band-edge photoluminescence of SiGe/strained-Si/SiGe type-II quantum wells on Si(100),” Appl. Phys. Lett. 63(25), 3509–3511 (1993).
[Crossref]

K. Kawaguchi, M. Morooka, K. Konishi, S. Koh, and Y. Shiraki, “Optical properties of strain-balanced SiGe planar microcavities with Ge dots on Si substrates,” Appl. Phys. Lett. 81(5), 817–819 (2002).
[Crossref]

S. Fukatsu, H. Sunamuru, Y. Shiraki, and S. Komiyama, “Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot,” Appl. Phys. Lett. 71(2), 258–261 (1997).
[Crossref]

L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici, G. Franzò, F. Priolo, and F. Iacona, “Dynamics of stimulated emission in silicon nanocrystals,” Appl. Phys. Lett. 82(26), 4636–4638 (2003).
[Crossref]

G. Franzò, F. Priolo, S. Coffa, A. Polman, and A. Camera, “Room-temperature electroluminescence from Er‐doped crystalline Si,” Appl. Phys. Lett. 64(17), 2235–2237 (1994).
[Crossref]

J. S. Xia, K. Nemoto, Y. Ikegami, and Y. Shiraki, “Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks,” Appl. Phys. Lett. 91, 011104–1-011104–3 (2007).
[Crossref] [PubMed]

T. Brunhes, P. Boucaud, S. Sauvage, F. Aniel, J.-M. Lourtioz, C. Hernandez, Y. Campidelli, O. Kermarrec, D. Bensahel, G. Faini, and I. Sagnes, “Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition,” Appl. Phys. Lett. 77(12), 1822–1824 (2000).
[Crossref]

“M. El kurdi, S. David, P. Boucard, C. Kammerer, X. Li, V. Le Thanh, and S Sauvage, “Strong 1.3–1.5 μm luminescence from Ge/Si self-assembled islands in highly confining microcavities on silicon on insulator,” J. Appl. Phys. 96, 997–1000 (2004).
[Crossref]

S. Fukatsu, N. Usami, Y. Kato, H. Sunamura, Y. Shiraki, H. Oku, T. Ohnishi, Y. Ohmori, and K. Okumura, “Gas-source molecular beam epitaxy and luminescence characterization of strained Si1-xGex/Si quantum wells,” J. Cryst. Growth 136(1-4), 315–321 (1994).
[Crossref]

S. Fukatsu, N. Usami, T. Chinzei, Y. Shiraki, A. Nishida, and K. Nakagawa, “Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy,” Jpn. J. Appl. Phys. 31(Part 2, No. 8A), L1015–L1017 (1992).
[Crossref]

L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzò, and F. Priolo, “Optical gain in silicon nanocrystals,” Nature 408(6811), 440–444 (2000).
[Crossref] [PubMed]

M. El Kurdi, X. Checoury, S. David, T. P. Ngo, N. Zerounian, P. Boucaud, O. Kermarrec, Y. Campidelli, and D. Bensahel, “Quality factor of Si-based photonic crystal L3 nanocavities probed with an internal source,” Opt. Express 16(12), 8780–8791 (2008).
[Crossref] [PubMed]

J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. S. Williams, M. J. Aziz, and F. Capasso, “Point defect engineered Si sub-bandgap light-emitting diode,” Opt. Express 15(11), 6727–6733 (2007).
[Crossref] [PubMed]

D. Pacifici, G. Franzò, F. Priolo, F. Iacona, and L. D. Negro, “Modeling and perspectives of the Si nanocrystals-Er interaction for optical amplification,” Phys.Rev.B 67, 245301–1-245301–13 (2003).
[Crossref]

A. A. Shklyaev, Y. Nakamura, F. N. Dultsev, and M. Ichikawa, “Defect-related light emission in the 1.4-1.7μm range from Si layers at room temperature,” J. Appl. Phys. 105, 063513–1-063513–4 (2009).

J. S. Xia, Y. Ikegami, Y. Shiraki, N. Usami, and Y. Nakata, “Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature,” Appl. Phys. Lett. 89, 201102–1-201102–3 (2006).