Abstract

Nonlinear absorption at 1.064 and 1.535 μm wavelengths by two photon and free carrier absorption processes in undoped and Fe doped InP has been investigated. Using picosecond and nanosecond duration lasers, a self-consistent set of the two photon and free carrier absorption coefficients are experimentally obtained through nonlinear transmission measurements for the first time. Reduced carrier recombination lifetime caused a decrease in nonlinear absorption of nanosecond duration laser pulses in Fe doped samples.

©2009 Optical Society of America

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References

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  1. C. C. Lee and H. Y. Fan, “Two-photon absorption with exciton effect for degenerate valence bands,” Phys. Rev. B 9(8), 3502–3516 (1974).
    [Crossref]
  2. M. D. Dvorak and B. L. Justus, “Z-scan studies of nonlinear absorption and refraction in bulk, undoped InP,” Opt. Commun. 114(1-2), 147–150 (1995).
    [Crossref]
  3. V. Nathan, A. H. Guenther, and S. S. Mitra, “Review of multiphoton absorption in crystalline solids,” J. Opt. Soc. Am. B 2(2), 294–316 (1985).
    [Crossref]
  4. D. Vignaud, J. F. Lampin, and F. Mollot, “Two-photon absorption in InP substrates in the 1.55 µm range,” Appl. Phys. Lett. 85(2), 239–241 (2004).
    [Crossref]
  5. L. P. Gonzalez, J. M. Murray, V. M. Cowan, and S. Guha, “Measurement of the nonlinear optical properties of semiconductors using the Irradiance Scan technique,” Proc. SPIE 6875, 68750R (2008).
    [Crossref]
  6. J. Casey and P. L. Carter, “Variation of intervalence band absorption with hole concentration in p-type InP,” Appl. Phys. Lett. 44(1), 82–83 (1984).
    [Crossref]
  7. A. A. Said, M. Sheik-Bahae, D. J. Hagan, T. H. Wei, J. Wang, J. Young, and E. W. V. Stryland, “Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe,” J. Opt. Soc. Am. B 9(3), 405–414 (1992).
    [Crossref]
  8. S. Hughes, J. Burzler, G. Spruce, and B. S. Wherrett, “Fast Fourier Transform techniques for efficient simulation of Z-scan measurements,” J. Opt. Soc. Am. B 12(10), 1888–1893 (1995).
    [Crossref]
  9. D. I. Kovsh, S. Yang, D. J. Hagan, and E. W. Van Stryland, “Nonlinear optical beam propagation for optical limiting,” Appl. Opt. 38(24), 5168–5180 (1999).
    [Crossref]
  10. M. B. Haeri, S. R. Kingham, and P. K. Milsom, “Nonlinear absorption and refraction in indium arsenide,” J. Appl. Phys. 99(1), 013514 (2006).
    [Crossref]
  11. M. D. Feit and J. A. Fleck., “Light propagation in graded-index optical fibers,” Appl. Opt. 17(24), 3990–3998 (1978).
    [Crossref] [PubMed]
  12. G. P. Agrawal, Nonlinear Fiber Optics, 4th ed. (Academic Press, New York, 2007).
  13. G. D. Pettit and W. J. Turner, “Refractive Index of InP,” J. Appl. Phys. 36(6), 2081 (1965).
    [Crossref]
  14. S. Krishnamurthy, SRI International, 333 Ravenswood Ave., Menlo Park, CA 94025 is preparing a manuscript to be called “Nonlinear absorption in InP.”

2008 (1)

L. P. Gonzalez, J. M. Murray, V. M. Cowan, and S. Guha, “Measurement of the nonlinear optical properties of semiconductors using the Irradiance Scan technique,” Proc. SPIE 6875, 68750R (2008).
[Crossref]

2006 (1)

M. B. Haeri, S. R. Kingham, and P. K. Milsom, “Nonlinear absorption and refraction in indium arsenide,” J. Appl. Phys. 99(1), 013514 (2006).
[Crossref]

2004 (1)

D. Vignaud, J. F. Lampin, and F. Mollot, “Two-photon absorption in InP substrates in the 1.55 µm range,” Appl. Phys. Lett. 85(2), 239–241 (2004).
[Crossref]

1999 (1)

1995 (2)

M. D. Dvorak and B. L. Justus, “Z-scan studies of nonlinear absorption and refraction in bulk, undoped InP,” Opt. Commun. 114(1-2), 147–150 (1995).
[Crossref]

S. Hughes, J. Burzler, G. Spruce, and B. S. Wherrett, “Fast Fourier Transform techniques for efficient simulation of Z-scan measurements,” J. Opt. Soc. Am. B 12(10), 1888–1893 (1995).
[Crossref]

1992 (1)

1985 (1)

1984 (1)

J. Casey and P. L. Carter, “Variation of intervalence band absorption with hole concentration in p-type InP,” Appl. Phys. Lett. 44(1), 82–83 (1984).
[Crossref]

1978 (1)

1974 (1)

C. C. Lee and H. Y. Fan, “Two-photon absorption with exciton effect for degenerate valence bands,” Phys. Rev. B 9(8), 3502–3516 (1974).
[Crossref]

1965 (1)

G. D. Pettit and W. J. Turner, “Refractive Index of InP,” J. Appl. Phys. 36(6), 2081 (1965).
[Crossref]

Burzler, J.

Carter, P. L.

J. Casey and P. L. Carter, “Variation of intervalence band absorption with hole concentration in p-type InP,” Appl. Phys. Lett. 44(1), 82–83 (1984).
[Crossref]

Casey, J.

J. Casey and P. L. Carter, “Variation of intervalence band absorption with hole concentration in p-type InP,” Appl. Phys. Lett. 44(1), 82–83 (1984).
[Crossref]

Cowan, V. M.

L. P. Gonzalez, J. M. Murray, V. M. Cowan, and S. Guha, “Measurement of the nonlinear optical properties of semiconductors using the Irradiance Scan technique,” Proc. SPIE 6875, 68750R (2008).
[Crossref]

Dvorak, M. D.

M. D. Dvorak and B. L. Justus, “Z-scan studies of nonlinear absorption and refraction in bulk, undoped InP,” Opt. Commun. 114(1-2), 147–150 (1995).
[Crossref]

Fan, H. Y.

C. C. Lee and H. Y. Fan, “Two-photon absorption with exciton effect for degenerate valence bands,” Phys. Rev. B 9(8), 3502–3516 (1974).
[Crossref]

Feit, M. D.

Fleck, J. A.

Gonzalez, L. P.

L. P. Gonzalez, J. M. Murray, V. M. Cowan, and S. Guha, “Measurement of the nonlinear optical properties of semiconductors using the Irradiance Scan technique,” Proc. SPIE 6875, 68750R (2008).
[Crossref]

Guenther, A. H.

Guha, S.

L. P. Gonzalez, J. M. Murray, V. M. Cowan, and S. Guha, “Measurement of the nonlinear optical properties of semiconductors using the Irradiance Scan technique,” Proc. SPIE 6875, 68750R (2008).
[Crossref]

Haeri, M. B.

M. B. Haeri, S. R. Kingham, and P. K. Milsom, “Nonlinear absorption and refraction in indium arsenide,” J. Appl. Phys. 99(1), 013514 (2006).
[Crossref]

Hagan, D. J.

Hughes, S.

Justus, B. L.

M. D. Dvorak and B. L. Justus, “Z-scan studies of nonlinear absorption and refraction in bulk, undoped InP,” Opt. Commun. 114(1-2), 147–150 (1995).
[Crossref]

Kingham, S. R.

M. B. Haeri, S. R. Kingham, and P. K. Milsom, “Nonlinear absorption and refraction in indium arsenide,” J. Appl. Phys. 99(1), 013514 (2006).
[Crossref]

Kovsh, D. I.

Lampin, J. F.

D. Vignaud, J. F. Lampin, and F. Mollot, “Two-photon absorption in InP substrates in the 1.55 µm range,” Appl. Phys. Lett. 85(2), 239–241 (2004).
[Crossref]

Lee, C. C.

C. C. Lee and H. Y. Fan, “Two-photon absorption with exciton effect for degenerate valence bands,” Phys. Rev. B 9(8), 3502–3516 (1974).
[Crossref]

Milsom, P. K.

M. B. Haeri, S. R. Kingham, and P. K. Milsom, “Nonlinear absorption and refraction in indium arsenide,” J. Appl. Phys. 99(1), 013514 (2006).
[Crossref]

Mitra, S. S.

Mollot, F.

D. Vignaud, J. F. Lampin, and F. Mollot, “Two-photon absorption in InP substrates in the 1.55 µm range,” Appl. Phys. Lett. 85(2), 239–241 (2004).
[Crossref]

Murray, J. M.

L. P. Gonzalez, J. M. Murray, V. M. Cowan, and S. Guha, “Measurement of the nonlinear optical properties of semiconductors using the Irradiance Scan technique,” Proc. SPIE 6875, 68750R (2008).
[Crossref]

Nathan, V.

Pettit, G. D.

G. D. Pettit and W. J. Turner, “Refractive Index of InP,” J. Appl. Phys. 36(6), 2081 (1965).
[Crossref]

Said, A. A.

Sheik-Bahae, M.

Spruce, G.

Stryland, E. W. V.

Turner, W. J.

G. D. Pettit and W. J. Turner, “Refractive Index of InP,” J. Appl. Phys. 36(6), 2081 (1965).
[Crossref]

Van Stryland, E. W.

Vignaud, D.

D. Vignaud, J. F. Lampin, and F. Mollot, “Two-photon absorption in InP substrates in the 1.55 µm range,” Appl. Phys. Lett. 85(2), 239–241 (2004).
[Crossref]

Wang, J.

Wei, T. H.

Wherrett, B. S.

Yang, S.

Young, J.

Appl. Opt. (2)

Appl. Phys. Lett. (2)

J. Casey and P. L. Carter, “Variation of intervalence band absorption with hole concentration in p-type InP,” Appl. Phys. Lett. 44(1), 82–83 (1984).
[Crossref]

D. Vignaud, J. F. Lampin, and F. Mollot, “Two-photon absorption in InP substrates in the 1.55 µm range,” Appl. Phys. Lett. 85(2), 239–241 (2004).
[Crossref]

J. Appl. Phys. (2)

M. B. Haeri, S. R. Kingham, and P. K. Milsom, “Nonlinear absorption and refraction in indium arsenide,” J. Appl. Phys. 99(1), 013514 (2006).
[Crossref]

G. D. Pettit and W. J. Turner, “Refractive Index of InP,” J. Appl. Phys. 36(6), 2081 (1965).
[Crossref]

J. Opt. Soc. Am. B (3)

Opt. Commun. (1)

M. D. Dvorak and B. L. Justus, “Z-scan studies of nonlinear absorption and refraction in bulk, undoped InP,” Opt. Commun. 114(1-2), 147–150 (1995).
[Crossref]

Phys. Rev. B (1)

C. C. Lee and H. Y. Fan, “Two-photon absorption with exciton effect for degenerate valence bands,” Phys. Rev. B 9(8), 3502–3516 (1974).
[Crossref]

Proc. SPIE (1)

L. P. Gonzalez, J. M. Murray, V. M. Cowan, and S. Guha, “Measurement of the nonlinear optical properties of semiconductors using the Irradiance Scan technique,” Proc. SPIE 6875, 68750R (2008).
[Crossref]

Other (2)

S. Krishnamurthy, SRI International, 333 Ravenswood Ave., Menlo Park, CA 94025 is preparing a manuscript to be called “Nonlinear absorption in InP.”

G. P. Agrawal, Nonlinear Fiber Optics, 4th ed. (Academic Press, New York, 2007).

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Figures (7)

Fig. 1
Fig. 1 Theoretical nonlinear absorption in InP at 1.064 μm for different pulse durations. As the pulsewidth increases, contribution from free carrier absorption becomes significant.
Fig. 2
Fig. 2 Transmission spectra of undoped and Fe doped InP samples used for NLA measurements. Undoped samples have multi-layer AR coatings while the Fe sample has a single layer coating.
Fig. 3
Fig. 3 Transmission spectra of Zn doped InP samples and average hole free carrier absorption cross section.
Fig. 4
Fig. 4 Nonlinear absorption results (open symbols) at 1.064 μm on undoped InP samples. Solid lines are theoretical results using values of β = 25.5 cm/GW and σabs = 1.5 x 10−17 cm2 for all data.
Fig. 5
Fig. 5 Nonlinear absorption results (open symbols) at 1.535 μm on undoped InP samples. Solid lines are theoretical results using values of β = 14.6 cm/GW and σabs = 7.2 x 10−17 cm2 for all data.
Fig. 6
Fig. 6 Output traces for undoped (left) and Fe doped (right) InP samples at similar incident irradiances. Input wavelength is 1.535 μm, t0 = 50 ns.
Fig. 7
Fig. 7 Nonlinear absorption in undoped (triangles) and Fe (circles) doped InP at 1.535 μm, t0 = 50 ns. Values of β and σabs used for both samples are the same. Lifetime in Fe:InP is set to 3 ns and greater than t0 for the undoped sample.

Tables (1)

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Table 1 Values of β and σabs at 1.064 and 1.535 μm.

Equations (4)

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Az=i2k02A+2iπλ(σrefN+dndTΔT+γI)A(α+σabsN+βI)A2
2=2x2+2y2
Nt=αIhν+βI22hνNτ
ΔTt=1ρc[(α+σabsN)I+βI2]

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