Abstract

Abstract

Aluminum-doped Ge2Sb2Te5 (AlxGST) films were deposited on Si(100) substrates by co-magnetron sputtering system. The Aluminum concentrations in these films are determined by X-ray photoelectron spectroscopy (XPS). The influence of Al doping upon phase change characteristics of these AlxGST alloy films has been investigated by X-ray diffraction (XRD) and a temperature-regulable UVISELTM typed spectroscopic ellipsometry (TRSE). With the augment of Al doping concentration, the crystalline temperatures of AlxGST films went up while annealing, and the face-centered-cubic (fcc) phase had high thermal stability. The reflectivity contrast of the films increases obviously, which is effective to improve the signal to noise ratio (SNR) for optical phase-change storage.

©2007 Optical Society of America

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  1. S. R. Ovshinsky, “Reversible Electrical Switching Phenomena in Disordered Structures,” Phys. Rev. Lett. 21, 1450–1453 (1968).
    [Crossref]
  2. J. Li, F. X. Gan, Z. T. Gu, Q. Xie, H. Ruan, and P. H. Liang, “Determination of optical parameters of GeTe semiconductor films after thermal treatment,” Opt. Mat. 14, 337–343 (2000).
    [Crossref]
  3. F. X. Gan, L.S. Hou, G. B. Wang, H. Y. Liu, and J. Li, “Optical and recording properties of short wavelength optical storage materials,” Mat. Sci. and Eng. B 76, 63–68 (2000).
    [Crossref]
  4. M. R. Kim, H. Seo, T. H. Jung, J. W. Park, and C. Yeon, Proc. “Microstructure-property relationship in nitrogen doped Ge2Sb2Te5 phase-change optical recording media,” SPIE 3401, 259–262 (1998).
    [Crossref]
  5. H. Seo, T. H. Jeong, J. W. Park, C. Yeon, S. J. Kim, and S. Y. Kim, “Investigation of crystallization behavior of sputter- deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films,” Jpn. J. Appl. Phys. 39, 745–751 (2000).
    [Crossref]
  6. S. Privitera, E. Rimini, and R. Zonca, “Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements,” Appl. Phys. Lett. 85, 3044–3046 (2004).
    [Crossref]
  7. D. Dimitrov and H. P. D. Shieh, “The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties,” Mat. Sci. and Eng. B 107, 107–112 (2004).
    [Crossref]
  8. L. Q. Men, J. Tominaga, H. Fuji, and N. Atoda, “Oxygen doping effects on super-resolution scattering-mode near-field optical data storage,” Jpn. J. Appl. Phys. 39, 2639–2642 (2000).
    [Crossref]
  9. L. Q. Men, J. Tominaga, H. Fuji, T. Kikukawa, and N. Atoda, “The effects of metal-doped GeSbTe films on light scattering- mode super-resolution near-field structure (super-RENS),” Jpn. J. Appl. Phys. 40, 1629–1633 (2001).
    [Crossref]
  10. C. T. Lie, P. C. Kuo, W. C. Hsu, T. H. Wu, P. W. Chen, and S. C. Chen, “Ge2Sb2Te5 thin film doped with silver,” Jpn. J. Appl. Phys. 42, 1026–1028 (2003).
    [Crossref]
  11. K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi, and M. Wuttig, “Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5,” Physica Status Solidi A 201, 3087–3095 (2004).
    [Crossref]
  12. W. D. Song, L. P. Shi, X. S. Miao, and T. C. Chong, “Phase change behaviors of Sn-doped Ge-Sb-Te material,” Appl. Phys. Lett. 90, 091904/1–091904/3 (2007).
    [Crossref]
  13. C. M. Lee, T. S. Chin, Y. Y. Huang, I. C. Tung, T. R. Jeng, D. Y. Chiang, and D. R. Huang, “Optical properties of Ge40Sb10Te50Bx (x=0-2) films,” Jpn. J. Appl. Phys 38, 6369–6371 (1999).
    [Crossref]
  14. A type of sputtering deposition machine was manufactured by the Leybold Optics Dresden GmbH in Germany.

2007 (1)

W. D. Song, L. P. Shi, X. S. Miao, and T. C. Chong, “Phase change behaviors of Sn-doped Ge-Sb-Te material,” Appl. Phys. Lett. 90, 091904/1–091904/3 (2007).
[Crossref]

2004 (3)

K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi, and M. Wuttig, “Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5,” Physica Status Solidi A 201, 3087–3095 (2004).
[Crossref]

S. Privitera, E. Rimini, and R. Zonca, “Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements,” Appl. Phys. Lett. 85, 3044–3046 (2004).
[Crossref]

D. Dimitrov and H. P. D. Shieh, “The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties,” Mat. Sci. and Eng. B 107, 107–112 (2004).
[Crossref]

2003 (1)

C. T. Lie, P. C. Kuo, W. C. Hsu, T. H. Wu, P. W. Chen, and S. C. Chen, “Ge2Sb2Te5 thin film doped with silver,” Jpn. J. Appl. Phys. 42, 1026–1028 (2003).
[Crossref]

2001 (1)

L. Q. Men, J. Tominaga, H. Fuji, T. Kikukawa, and N. Atoda, “The effects of metal-doped GeSbTe films on light scattering- mode super-resolution near-field structure (super-RENS),” Jpn. J. Appl. Phys. 40, 1629–1633 (2001).
[Crossref]

2000 (4)

L. Q. Men, J. Tominaga, H. Fuji, and N. Atoda, “Oxygen doping effects on super-resolution scattering-mode near-field optical data storage,” Jpn. J. Appl. Phys. 39, 2639–2642 (2000).
[Crossref]

J. Li, F. X. Gan, Z. T. Gu, Q. Xie, H. Ruan, and P. H. Liang, “Determination of optical parameters of GeTe semiconductor films after thermal treatment,” Opt. Mat. 14, 337–343 (2000).
[Crossref]

F. X. Gan, L.S. Hou, G. B. Wang, H. Y. Liu, and J. Li, “Optical and recording properties of short wavelength optical storage materials,” Mat. Sci. and Eng. B 76, 63–68 (2000).
[Crossref]

H. Seo, T. H. Jeong, J. W. Park, C. Yeon, S. J. Kim, and S. Y. Kim, “Investigation of crystallization behavior of sputter- deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films,” Jpn. J. Appl. Phys. 39, 745–751 (2000).
[Crossref]

1999 (1)

C. M. Lee, T. S. Chin, Y. Y. Huang, I. C. Tung, T. R. Jeng, D. Y. Chiang, and D. R. Huang, “Optical properties of Ge40Sb10Te50Bx (x=0-2) films,” Jpn. J. Appl. Phys 38, 6369–6371 (1999).
[Crossref]

1998 (1)

M. R. Kim, H. Seo, T. H. Jung, J. W. Park, and C. Yeon, Proc. “Microstructure-property relationship in nitrogen doped Ge2Sb2Te5 phase-change optical recording media,” SPIE 3401, 259–262 (1998).
[Crossref]

1968 (1)

S. R. Ovshinsky, “Reversible Electrical Switching Phenomena in Disordered Structures,” Phys. Rev. Lett. 21, 1450–1453 (1968).
[Crossref]

Atoda, N.

L. Q. Men, J. Tominaga, H. Fuji, T. Kikukawa, and N. Atoda, “The effects of metal-doped GeSbTe films on light scattering- mode super-resolution near-field structure (super-RENS),” Jpn. J. Appl. Phys. 40, 1629–1633 (2001).
[Crossref]

L. Q. Men, J. Tominaga, H. Fuji, and N. Atoda, “Oxygen doping effects on super-resolution scattering-mode near-field optical data storage,” Jpn. J. Appl. Phys. 39, 2639–2642 (2000).
[Crossref]

Chen, P. W.

C. T. Lie, P. C. Kuo, W. C. Hsu, T. H. Wu, P. W. Chen, and S. C. Chen, “Ge2Sb2Te5 thin film doped with silver,” Jpn. J. Appl. Phys. 42, 1026–1028 (2003).
[Crossref]

Chen, S. C.

C. T. Lie, P. C. Kuo, W. C. Hsu, T. H. Wu, P. W. Chen, and S. C. Chen, “Ge2Sb2Te5 thin film doped with silver,” Jpn. J. Appl. Phys. 42, 1026–1028 (2003).
[Crossref]

Chiang, D. Y.

C. M. Lee, T. S. Chin, Y. Y. Huang, I. C. Tung, T. R. Jeng, D. Y. Chiang, and D. R. Huang, “Optical properties of Ge40Sb10Te50Bx (x=0-2) films,” Jpn. J. Appl. Phys 38, 6369–6371 (1999).
[Crossref]

Chin, T. S.

C. M. Lee, T. S. Chin, Y. Y. Huang, I. C. Tung, T. R. Jeng, D. Y. Chiang, and D. R. Huang, “Optical properties of Ge40Sb10Te50Bx (x=0-2) films,” Jpn. J. Appl. Phys 38, 6369–6371 (1999).
[Crossref]

Choi, S. Y.

K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi, and M. Wuttig, “Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5,” Physica Status Solidi A 201, 3087–3095 (2004).
[Crossref]

Chong, T. C.

W. D. Song, L. P. Shi, X. S. Miao, and T. C. Chong, “Phase change behaviors of Sn-doped Ge-Sb-Te material,” Appl. Phys. Lett. 90, 091904/1–091904/3 (2007).
[Crossref]

Dimitrov, D.

D. Dimitrov and H. P. D. Shieh, “The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties,” Mat. Sci. and Eng. B 107, 107–112 (2004).
[Crossref]

Fuji, H.

L. Q. Men, J. Tominaga, H. Fuji, T. Kikukawa, and N. Atoda, “The effects of metal-doped GeSbTe films on light scattering- mode super-resolution near-field structure (super-RENS),” Jpn. J. Appl. Phys. 40, 1629–1633 (2001).
[Crossref]

L. Q. Men, J. Tominaga, H. Fuji, and N. Atoda, “Oxygen doping effects on super-resolution scattering-mode near-field optical data storage,” Jpn. J. Appl. Phys. 39, 2639–2642 (2000).
[Crossref]

Gan, F. X.

J. Li, F. X. Gan, Z. T. Gu, Q. Xie, H. Ruan, and P. H. Liang, “Determination of optical parameters of GeTe semiconductor films after thermal treatment,” Opt. Mat. 14, 337–343 (2000).
[Crossref]

F. X. Gan, L.S. Hou, G. B. Wang, H. Y. Liu, and J. Li, “Optical and recording properties of short wavelength optical storage materials,” Mat. Sci. and Eng. B 76, 63–68 (2000).
[Crossref]

Gu, Z. T.

J. Li, F. X. Gan, Z. T. Gu, Q. Xie, H. Ruan, and P. H. Liang, “Determination of optical parameters of GeTe semiconductor films after thermal treatment,” Opt. Mat. 14, 337–343 (2000).
[Crossref]

Hou, L.S.

F. X. Gan, L.S. Hou, G. B. Wang, H. Y. Liu, and J. Li, “Optical and recording properties of short wavelength optical storage materials,” Mat. Sci. and Eng. B 76, 63–68 (2000).
[Crossref]

Hsu, W. C.

C. T. Lie, P. C. Kuo, W. C. Hsu, T. H. Wu, P. W. Chen, and S. C. Chen, “Ge2Sb2Te5 thin film doped with silver,” Jpn. J. Appl. Phys. 42, 1026–1028 (2003).
[Crossref]

Huang, D. R.

C. M. Lee, T. S. Chin, Y. Y. Huang, I. C. Tung, T. R. Jeng, D. Y. Chiang, and D. R. Huang, “Optical properties of Ge40Sb10Te50Bx (x=0-2) films,” Jpn. J. Appl. Phys 38, 6369–6371 (1999).
[Crossref]

Huang, Y. Y.

C. M. Lee, T. S. Chin, Y. Y. Huang, I. C. Tung, T. R. Jeng, D. Y. Chiang, and D. R. Huang, “Optical properties of Ge40Sb10Te50Bx (x=0-2) films,” Jpn. J. Appl. Phys 38, 6369–6371 (1999).
[Crossref]

Jeng, T. R.

C. M. Lee, T. S. Chin, Y. Y. Huang, I. C. Tung, T. R. Jeng, D. Y. Chiang, and D. R. Huang, “Optical properties of Ge40Sb10Te50Bx (x=0-2) films,” Jpn. J. Appl. Phys 38, 6369–6371 (1999).
[Crossref]

Jeong, T. H.

H. Seo, T. H. Jeong, J. W. Park, C. Yeon, S. J. Kim, and S. Y. Kim, “Investigation of crystallization behavior of sputter- deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films,” Jpn. J. Appl. Phys. 39, 745–751 (2000).
[Crossref]

Jung, T. H.

M. R. Kim, H. Seo, T. H. Jung, J. W. Park, and C. Yeon, Proc. “Microstructure-property relationship in nitrogen doped Ge2Sb2Te5 phase-change optical recording media,” SPIE 3401, 259–262 (1998).
[Crossref]

Kang, M. J.

K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi, and M. Wuttig, “Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5,” Physica Status Solidi A 201, 3087–3095 (2004).
[Crossref]

Kikukawa, T.

L. Q. Men, J. Tominaga, H. Fuji, T. Kikukawa, and N. Atoda, “The effects of metal-doped GeSbTe films on light scattering- mode super-resolution near-field structure (super-RENS),” Jpn. J. Appl. Phys. 40, 1629–1633 (2001).
[Crossref]

Kim, M. R.

M. R. Kim, H. Seo, T. H. Jung, J. W. Park, and C. Yeon, Proc. “Microstructure-property relationship in nitrogen doped Ge2Sb2Te5 phase-change optical recording media,” SPIE 3401, 259–262 (1998).
[Crossref]

Kim, S. J.

H. Seo, T. H. Jeong, J. W. Park, C. Yeon, S. J. Kim, and S. Y. Kim, “Investigation of crystallization behavior of sputter- deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films,” Jpn. J. Appl. Phys. 39, 745–751 (2000).
[Crossref]

Kim, S. Y.

H. Seo, T. H. Jeong, J. W. Park, C. Yeon, S. J. Kim, and S. Y. Kim, “Investigation of crystallization behavior of sputter- deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films,” Jpn. J. Appl. Phys. 39, 745–751 (2000).
[Crossref]

Kuo, P. C.

C. T. Lie, P. C. Kuo, W. C. Hsu, T. H. Wu, P. W. Chen, and S. C. Chen, “Ge2Sb2Te5 thin film doped with silver,” Jpn. J. Appl. Phys. 42, 1026–1028 (2003).
[Crossref]

Lee, C. M.

C. M. Lee, T. S. Chin, Y. Y. Huang, I. C. Tung, T. R. Jeng, D. Y. Chiang, and D. R. Huang, “Optical properties of Ge40Sb10Te50Bx (x=0-2) films,” Jpn. J. Appl. Phys 38, 6369–6371 (1999).
[Crossref]

Li, J.

J. Li, F. X. Gan, Z. T. Gu, Q. Xie, H. Ruan, and P. H. Liang, “Determination of optical parameters of GeTe semiconductor films after thermal treatment,” Opt. Mat. 14, 337–343 (2000).
[Crossref]

F. X. Gan, L.S. Hou, G. B. Wang, H. Y. Liu, and J. Li, “Optical and recording properties of short wavelength optical storage materials,” Mat. Sci. and Eng. B 76, 63–68 (2000).
[Crossref]

Liang, P. H.

J. Li, F. X. Gan, Z. T. Gu, Q. Xie, H. Ruan, and P. H. Liang, “Determination of optical parameters of GeTe semiconductor films after thermal treatment,” Opt. Mat. 14, 337–343 (2000).
[Crossref]

Lie, C. T.

C. T. Lie, P. C. Kuo, W. C. Hsu, T. H. Wu, P. W. Chen, and S. C. Chen, “Ge2Sb2Te5 thin film doped with silver,” Jpn. J. Appl. Phys. 42, 1026–1028 (2003).
[Crossref]

Liu, H. Y.

F. X. Gan, L.S. Hou, G. B. Wang, H. Y. Liu, and J. Li, “Optical and recording properties of short wavelength optical storage materials,” Mat. Sci. and Eng. B 76, 63–68 (2000).
[Crossref]

Men, L. Q.

L. Q. Men, J. Tominaga, H. Fuji, T. Kikukawa, and N. Atoda, “The effects of metal-doped GeSbTe films on light scattering- mode super-resolution near-field structure (super-RENS),” Jpn. J. Appl. Phys. 40, 1629–1633 (2001).
[Crossref]

L. Q. Men, J. Tominaga, H. Fuji, and N. Atoda, “Oxygen doping effects on super-resolution scattering-mode near-field optical data storage,” Jpn. J. Appl. Phys. 39, 2639–2642 (2000).
[Crossref]

Miao, X. S.

W. D. Song, L. P. Shi, X. S. Miao, and T. C. Chong, “Phase change behaviors of Sn-doped Ge-Sb-Te material,” Appl. Phys. Lett. 90, 091904/1–091904/3 (2007).
[Crossref]

Ovshinsky, S. R.

S. R. Ovshinsky, “Reversible Electrical Switching Phenomena in Disordered Structures,” Phys. Rev. Lett. 21, 1450–1453 (1968).
[Crossref]

Park, J. W.

H. Seo, T. H. Jeong, J. W. Park, C. Yeon, S. J. Kim, and S. Y. Kim, “Investigation of crystallization behavior of sputter- deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films,” Jpn. J. Appl. Phys. 39, 745–751 (2000).
[Crossref]

M. R. Kim, H. Seo, T. H. Jung, J. W. Park, and C. Yeon, Proc. “Microstructure-property relationship in nitrogen doped Ge2Sb2Te5 phase-change optical recording media,” SPIE 3401, 259–262 (1998).
[Crossref]

Privitera, S.

S. Privitera, E. Rimini, and R. Zonca, “Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements,” Appl. Phys. Lett. 85, 3044–3046 (2004).
[Crossref]

Rimini, E.

S. Privitera, E. Rimini, and R. Zonca, “Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements,” Appl. Phys. Lett. 85, 3044–3046 (2004).
[Crossref]

Ruan, H.

J. Li, F. X. Gan, Z. T. Gu, Q. Xie, H. Ruan, and P. H. Liang, “Determination of optical parameters of GeTe semiconductor films after thermal treatment,” Opt. Mat. 14, 337–343 (2000).
[Crossref]

Seo, H.

H. Seo, T. H. Jeong, J. W. Park, C. Yeon, S. J. Kim, and S. Y. Kim, “Investigation of crystallization behavior of sputter- deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films,” Jpn. J. Appl. Phys. 39, 745–751 (2000).
[Crossref]

M. R. Kim, H. Seo, T. H. Jung, J. W. Park, and C. Yeon, Proc. “Microstructure-property relationship in nitrogen doped Ge2Sb2Te5 phase-change optical recording media,” SPIE 3401, 259–262 (1998).
[Crossref]

Shi, L. P.

W. D. Song, L. P. Shi, X. S. Miao, and T. C. Chong, “Phase change behaviors of Sn-doped Ge-Sb-Te material,” Appl. Phys. Lett. 90, 091904/1–091904/3 (2007).
[Crossref]

Shieh, H. P. D.

D. Dimitrov and H. P. D. Shieh, “The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties,” Mat. Sci. and Eng. B 107, 107–112 (2004).
[Crossref]

Song, W. D.

W. D. Song, L. P. Shi, X. S. Miao, and T. C. Chong, “Phase change behaviors of Sn-doped Ge-Sb-Te material,” Appl. Phys. Lett. 90, 091904/1–091904/3 (2007).
[Crossref]

Steimer, C.

K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi, and M. Wuttig, “Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5,” Physica Status Solidi A 201, 3087–3095 (2004).
[Crossref]

Tominaga, J.

L. Q. Men, J. Tominaga, H. Fuji, T. Kikukawa, and N. Atoda, “The effects of metal-doped GeSbTe films on light scattering- mode super-resolution near-field structure (super-RENS),” Jpn. J. Appl. Phys. 40, 1629–1633 (2001).
[Crossref]

L. Q. Men, J. Tominaga, H. Fuji, and N. Atoda, “Oxygen doping effects on super-resolution scattering-mode near-field optical data storage,” Jpn. J. Appl. Phys. 39, 2639–2642 (2000).
[Crossref]

Tung, I. C.

C. M. Lee, T. S. Chin, Y. Y. Huang, I. C. Tung, T. R. Jeng, D. Y. Chiang, and D. R. Huang, “Optical properties of Ge40Sb10Te50Bx (x=0-2) films,” Jpn. J. Appl. Phys 38, 6369–6371 (1999).
[Crossref]

Wamwangi, D.

K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi, and M. Wuttig, “Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5,” Physica Status Solidi A 201, 3087–3095 (2004).
[Crossref]

Wang, G. B.

F. X. Gan, L.S. Hou, G. B. Wang, H. Y. Liu, and J. Li, “Optical and recording properties of short wavelength optical storage materials,” Mat. Sci. and Eng. B 76, 63–68 (2000).
[Crossref]

Wang, K.

K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi, and M. Wuttig, “Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5,” Physica Status Solidi A 201, 3087–3095 (2004).
[Crossref]

Wu, T. H.

C. T. Lie, P. C. Kuo, W. C. Hsu, T. H. Wu, P. W. Chen, and S. C. Chen, “Ge2Sb2Te5 thin film doped with silver,” Jpn. J. Appl. Phys. 42, 1026–1028 (2003).
[Crossref]

Wuttig, M.

K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi, and M. Wuttig, “Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5,” Physica Status Solidi A 201, 3087–3095 (2004).
[Crossref]

Xie, Q.

J. Li, F. X. Gan, Z. T. Gu, Q. Xie, H. Ruan, and P. H. Liang, “Determination of optical parameters of GeTe semiconductor films after thermal treatment,” Opt. Mat. 14, 337–343 (2000).
[Crossref]

Yeon, C.

H. Seo, T. H. Jeong, J. W. Park, C. Yeon, S. J. Kim, and S. Y. Kim, “Investigation of crystallization behavior of sputter- deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films,” Jpn. J. Appl. Phys. 39, 745–751 (2000).
[Crossref]

M. R. Kim, H. Seo, T. H. Jung, J. W. Park, and C. Yeon, Proc. “Microstructure-property relationship in nitrogen doped Ge2Sb2Te5 phase-change optical recording media,” SPIE 3401, 259–262 (1998).
[Crossref]

Ziegler, S.

K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi, and M. Wuttig, “Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5,” Physica Status Solidi A 201, 3087–3095 (2004).
[Crossref]

Zonca, R.

S. Privitera, E. Rimini, and R. Zonca, “Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements,” Appl. Phys. Lett. 85, 3044–3046 (2004).
[Crossref]

Appl. Phys. Lett. (2)

S. Privitera, E. Rimini, and R. Zonca, “Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements,” Appl. Phys. Lett. 85, 3044–3046 (2004).
[Crossref]

W. D. Song, L. P. Shi, X. S. Miao, and T. C. Chong, “Phase change behaviors of Sn-doped Ge-Sb-Te material,” Appl. Phys. Lett. 90, 091904/1–091904/3 (2007).
[Crossref]

Jpn. J. Appl. Phys (1)

C. M. Lee, T. S. Chin, Y. Y. Huang, I. C. Tung, T. R. Jeng, D. Y. Chiang, and D. R. Huang, “Optical properties of Ge40Sb10Te50Bx (x=0-2) films,” Jpn. J. Appl. Phys 38, 6369–6371 (1999).
[Crossref]

Jpn. J. Appl. Phys. (4)

H. Seo, T. H. Jeong, J. W. Park, C. Yeon, S. J. Kim, and S. Y. Kim, “Investigation of crystallization behavior of sputter- deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films,” Jpn. J. Appl. Phys. 39, 745–751 (2000).
[Crossref]

L. Q. Men, J. Tominaga, H. Fuji, and N. Atoda, “Oxygen doping effects on super-resolution scattering-mode near-field optical data storage,” Jpn. J. Appl. Phys. 39, 2639–2642 (2000).
[Crossref]

L. Q. Men, J. Tominaga, H. Fuji, T. Kikukawa, and N. Atoda, “The effects of metal-doped GeSbTe films on light scattering- mode super-resolution near-field structure (super-RENS),” Jpn. J. Appl. Phys. 40, 1629–1633 (2001).
[Crossref]

C. T. Lie, P. C. Kuo, W. C. Hsu, T. H. Wu, P. W. Chen, and S. C. Chen, “Ge2Sb2Te5 thin film doped with silver,” Jpn. J. Appl. Phys. 42, 1026–1028 (2003).
[Crossref]

Mat. Sci. and Eng. B (2)

F. X. Gan, L.S. Hou, G. B. Wang, H. Y. Liu, and J. Li, “Optical and recording properties of short wavelength optical storage materials,” Mat. Sci. and Eng. B 76, 63–68 (2000).
[Crossref]

D. Dimitrov and H. P. D. Shieh, “The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties,” Mat. Sci. and Eng. B 107, 107–112 (2004).
[Crossref]

Opt. Mat. (1)

J. Li, F. X. Gan, Z. T. Gu, Q. Xie, H. Ruan, and P. H. Liang, “Determination of optical parameters of GeTe semiconductor films after thermal treatment,” Opt. Mat. 14, 337–343 (2000).
[Crossref]

Phys. Rev. Lett. (1)

S. R. Ovshinsky, “Reversible Electrical Switching Phenomena in Disordered Structures,” Phys. Rev. Lett. 21, 1450–1453 (1968).
[Crossref]

Physica Status Solidi A (1)

K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. J. Kang, S. Y. Choi, and M. Wuttig, “Influence of Sn doping upon the phase change characteristics of Ge2Sb2Te5,” Physica Status Solidi A 201, 3087–3095 (2004).
[Crossref]

SPIE (1)

M. R. Kim, H. Seo, T. H. Jung, J. W. Park, and C. Yeon, Proc. “Microstructure-property relationship in nitrogen doped Ge2Sb2Te5 phase-change optical recording media,” SPIE 3401, 259–262 (1998).
[Crossref]

Other (1)

A type of sputtering deposition machine was manufactured by the Leybold Optics Dresden GmbH in Germany.

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Figures (3)

Fig. 1.
Fig. 1. (a). XRD patterns of the samples annealed at 30°C. (b). XRD patterns of the AlxGST films annealed at 200°C. (c). XRD patterns of the AlxGST films annealed at 400°C
Fig. 2.
Fig. 2. The extinction coefficients of the AlxGST films at different annealing temperatures
Fig. 3.
Fig. 3. The reflectivity contrast curves of the AlxGST films annealed at 200°C

Tables (1)

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Table 1. Experimental Data of Al0GST and AlxGST samples

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