Abstract

We demonstrated the first room temperature continuous wave lasing in InAs quantum-dot microdisk lasers with a standard air-cladding optical confinement structure. The spectrum shows the single strong lasing peak at a wavelength of 1280 nm. The threshold pump power is 410 µW, and the corresponding effective threshold obtained by considering the absorption efficiency is 81 µW. This achievement is mainly attributed to the increase in Q factor by the improved disk shape.

©2005 Optical Society of America

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  1. Y. Arakawa and H. Sakaki, “Multidimensional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett. 40, 939–941 (1982).
    [Crossref]
  2. M. Asada, Y. Miyamoto, and Y Suamatsu, “Gain and Threshold of Three-Dimensional Quantum-Box Lasers,” IEEE J. of Quantum Electron. QE-22, 1915–1921 (1986).
    [Crossref]
  3. S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60, 289–291 (1992).
    [Crossref]
  4. M. Fujita, R. Ushigome, and T. Baba, “Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 µA,” Electorn. Lett. 36, 169–170 (2000).
  5. T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9, 1340–1346 (2003).
    [Crossref]
  6. B. Gayral, J. M. Gerard, A. Lemaitre, C. Dupuis, L. Manin, and J. L. Pelouard, “High-Q wet-etched GaAs microdisks containing InAs quantum boxes,” Appl. Phys. Lett. 75, 1908–1910 (1999).
    [Crossref]
  7. H. Cao, J. Y. Xu, W. H. Xiang, Y. Ma, S.-H. Chang, S. T. Ho, and G. S. Solomon, “Optically pumped InAs quantum dot microdisk lasers,” Appl. Phys. Lett. 76, 3519–3521 (2000).
    [Crossref]
  8. P. Michler, A. Kiraz, L. Zhang, C. Becher, E. Hu, and A. Imamoglu, “Laser emission from quantum dots in microdisk structures,” Appl. Phys. Lett. 77, 184–186 (2000).
    [Crossref]
  9. K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78, 3397–3399 (2001).
    [Crossref]
  10. L. Zhang and E. Hu, “Lasing from InGaAs quantum dots in an injection microdisk,” Appl. Phys. Lett. 82, 319–321 (2003).
    [Crossref]
  11. T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.
  12. T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,” Appl. Phys. Lett. 85, 1326–1328 (2004).
    [Crossref]
  13. T. Yang, O. Shchekin, J. D. O’Brien, and D. G. Deppe, “Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions,” Electron. Lett. 39, 1657–1658 (2003).
    [Crossref]
  14. J. Tatebayashi, M. Nishioka, and Y. Arakawa, “Over 1.5 µm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 78, 3469–3471 (2001).
    [Crossref]
  15. K. Nozaki, A. Nakagawa, D. Sano, and T. Baba, “Ultralow threshold and single-mode lasing in microgear lasers and its fusion with quasi-periodic photonic crystals,” IEEE J. Sel. Top. Quantum Electron. 9, 1355–1360 (2003).
    [Crossref]
  16. R. Heits, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, and D. Bimberg, “Temperature dependent optical properties of self-organized InAs/GaAs quantum dots,” J. Electron. Mater. 28, 520–527 (1999)
    [Crossref]
  17. M. Fijita, K. Teshima, and T. Baba, “Low-threshold continuous-wave lasing in photopumped GaInAsP microdisk lasers,” Jpn. J. Appl. Phys. 40, L875–L877 (2001).
    [Crossref]
  18. J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, and L. T. Florez “Vertical-cavity surface-emitting lasers: design, growth, fabrication, characterization,” IEEE J. Quantum Electron. 27, 1332–1346 (1991).
    [Crossref]
  19. R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41, 6364–6369 (2002).
    [Crossref]

2004 (1)

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,” Appl. Phys. Lett. 85, 1326–1328 (2004).
[Crossref]

2003 (4)

T. Yang, O. Shchekin, J. D. O’Brien, and D. G. Deppe, “Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions,” Electron. Lett. 39, 1657–1658 (2003).
[Crossref]

L. Zhang and E. Hu, “Lasing from InGaAs quantum dots in an injection microdisk,” Appl. Phys. Lett. 82, 319–321 (2003).
[Crossref]

K. Nozaki, A. Nakagawa, D. Sano, and T. Baba, “Ultralow threshold and single-mode lasing in microgear lasers and its fusion with quasi-periodic photonic crystals,” IEEE J. Sel. Top. Quantum Electron. 9, 1355–1360 (2003).
[Crossref]

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9, 1340–1346 (2003).
[Crossref]

2002 (1)

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41, 6364–6369 (2002).
[Crossref]

2001 (3)

M. Fijita, K. Teshima, and T. Baba, “Low-threshold continuous-wave lasing in photopumped GaInAsP microdisk lasers,” Jpn. J. Appl. Phys. 40, L875–L877 (2001).
[Crossref]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78, 3397–3399 (2001).
[Crossref]

J. Tatebayashi, M. Nishioka, and Y. Arakawa, “Over 1.5 µm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 78, 3469–3471 (2001).
[Crossref]

2000 (3)

H. Cao, J. Y. Xu, W. H. Xiang, Y. Ma, S.-H. Chang, S. T. Ho, and G. S. Solomon, “Optically pumped InAs quantum dot microdisk lasers,” Appl. Phys. Lett. 76, 3519–3521 (2000).
[Crossref]

P. Michler, A. Kiraz, L. Zhang, C. Becher, E. Hu, and A. Imamoglu, “Laser emission from quantum dots in microdisk structures,” Appl. Phys. Lett. 77, 184–186 (2000).
[Crossref]

M. Fujita, R. Ushigome, and T. Baba, “Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 µA,” Electorn. Lett. 36, 169–170 (2000).

1999 (2)

B. Gayral, J. M. Gerard, A. Lemaitre, C. Dupuis, L. Manin, and J. L. Pelouard, “High-Q wet-etched GaAs microdisks containing InAs quantum boxes,” Appl. Phys. Lett. 75, 1908–1910 (1999).
[Crossref]

R. Heits, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, and D. Bimberg, “Temperature dependent optical properties of self-organized InAs/GaAs quantum dots,” J. Electron. Mater. 28, 520–527 (1999)
[Crossref]

1992 (1)

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60, 289–291 (1992).
[Crossref]

1991 (1)

J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, and L. T. Florez “Vertical-cavity surface-emitting lasers: design, growth, fabrication, characterization,” IEEE J. Quantum Electron. 27, 1332–1346 (1991).
[Crossref]

1986 (1)

M. Asada, Y. Miyamoto, and Y Suamatsu, “Gain and Threshold of Three-Dimensional Quantum-Box Lasers,” IEEE J. of Quantum Electron. QE-22, 1915–1921 (1986).
[Crossref]

1982 (1)

Y. Arakawa and H. Sakaki, “Multidimensional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett. 40, 939–941 (1982).
[Crossref]

Arakawa, Y.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,” Appl. Phys. Lett. 85, 1326–1328 (2004).
[Crossref]

J. Tatebayashi, M. Nishioka, and Y. Arakawa, “Over 1.5 µm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 78, 3469–3471 (2001).
[Crossref]

Y. Arakawa and H. Sakaki, “Multidimensional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett. 40, 939–941 (1982).
[Crossref]

Asada, M.

M. Asada, Y. Miyamoto, and Y Suamatsu, “Gain and Threshold of Three-Dimensional Quantum-Box Lasers,” IEEE J. of Quantum Electron. QE-22, 1915–1921 (1986).
[Crossref]

Baba, T.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,” Appl. Phys. Lett. 85, 1326–1328 (2004).
[Crossref]

K. Nozaki, A. Nakagawa, D. Sano, and T. Baba, “Ultralow threshold and single-mode lasing in microgear lasers and its fusion with quasi-periodic photonic crystals,” IEEE J. Sel. Top. Quantum Electron. 9, 1355–1360 (2003).
[Crossref]

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9, 1340–1346 (2003).
[Crossref]

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41, 6364–6369 (2002).
[Crossref]

M. Fijita, K. Teshima, and T. Baba, “Low-threshold continuous-wave lasing in photopumped GaInAsP microdisk lasers,” Jpn. J. Appl. Phys. 40, L875–L877 (2001).
[Crossref]

M. Fujita, R. Ushigome, and T. Baba, “Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 µA,” Electorn. Lett. 36, 169–170 (2000).

Becher, C.

P. Michler, A. Kiraz, L. Zhang, C. Becher, E. Hu, and A. Imamoglu, “Laser emission from quantum dots in microdisk structures,” Appl. Phys. Lett. 77, 184–186 (2000).
[Crossref]

Bimberg, D.

R. Heits, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, and D. Bimberg, “Temperature dependent optical properties of self-organized InAs/GaAs quantum dots,” J. Electron. Mater. 28, 520–527 (1999)
[Crossref]

Cao, H.

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78, 3397–3399 (2001).
[Crossref]

H. Cao, J. Y. Xu, W. H. Xiang, Y. Ma, S.-H. Chang, S. T. Ho, and G. S. Solomon, “Optically pumped InAs quantum dot microdisk lasers,” Appl. Phys. Lett. 76, 3519–3521 (2000).
[Crossref]

Cao, J.

T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.

Chang, S. H.

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78, 3397–3399 (2001).
[Crossref]

Chang, S.-H.

H. Cao, J. Y. Xu, W. H. Xiang, Y. Ma, S.-H. Chang, S. T. Ho, and G. S. Solomon, “Optically pumped InAs quantum dot microdisk lasers,” Appl. Phys. Lett. 76, 3519–3521 (2000).
[Crossref]

Deppe, D.

T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.

Deppe, D. G.

T. Yang, O. Shchekin, J. D. O’Brien, and D. G. Deppe, “Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions,” Electron. Lett. 39, 1657–1658 (2003).
[Crossref]

Dupuis, C.

B. Gayral, J. M. Gerard, A. Lemaitre, C. Dupuis, L. Manin, and J. L. Pelouard, “High-Q wet-etched GaAs microdisks containing InAs quantum boxes,” Appl. Phys. Lett. 75, 1908–1910 (1999).
[Crossref]

Farrell, S.

T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.

Fijita, M.

M. Fijita, K. Teshima, and T. Baba, “Low-threshold continuous-wave lasing in photopumped GaInAsP microdisk lasers,” Jpn. J. Appl. Phys. 40, L875–L877 (2001).
[Crossref]

Florez, L. T.

J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, and L. T. Florez “Vertical-cavity surface-emitting lasers: design, growth, fabrication, characterization,” IEEE J. Quantum Electron. 27, 1332–1346 (1991).
[Crossref]

Fujita, M.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41, 6364–6369 (2002).
[Crossref]

M. Fujita, R. Ushigome, and T. Baba, “Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 µA,” Electorn. Lett. 36, 169–170 (2000).

Gayral, B.

B. Gayral, J. M. Gerard, A. Lemaitre, C. Dupuis, L. Manin, and J. L. Pelouard, “High-Q wet-etched GaAs microdisks containing InAs quantum boxes,” Appl. Phys. Lett. 75, 1908–1910 (1999).
[Crossref]

Gerard, J. M.

B. Gayral, J. M. Gerard, A. Lemaitre, C. Dupuis, L. Manin, and J. L. Pelouard, “High-Q wet-etched GaAs microdisks containing InAs quantum boxes,” Appl. Phys. Lett. 75, 1908–1910 (1999).
[Crossref]

Harbison, J. P.

J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, and L. T. Florez “Vertical-cavity surface-emitting lasers: design, growth, fabrication, characterization,” IEEE J. Quantum Electron. 27, 1332–1346 (1991).
[Crossref]

Heits, R.

R. Heits, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, and D. Bimberg, “Temperature dependent optical properties of self-organized InAs/GaAs quantum dots,” J. Electron. Mater. 28, 520–527 (1999)
[Crossref]

Ho, S. T.

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78, 3397–3399 (2001).
[Crossref]

H. Cao, J. Y. Xu, W. H. Xiang, Y. Ma, S.-H. Chang, S. T. Ho, and G. S. Solomon, “Optically pumped InAs quantum dot microdisk lasers,” Appl. Phys. Lett. 76, 3519–3521 (2000).
[Crossref]

Hoffmann, A.

R. Heits, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, and D. Bimberg, “Temperature dependent optical properties of self-organized InAs/GaAs quantum dots,” J. Electron. Mater. 28, 520–527 (1999)
[Crossref]

Hu, E.

L. Zhang and E. Hu, “Lasing from InGaAs quantum dots in an injection microdisk,” Appl. Phys. Lett. 82, 319–321 (2003).
[Crossref]

P. Michler, A. Kiraz, L. Zhang, C. Becher, E. Hu, and A. Imamoglu, “Laser emission from quantum dots in microdisk structures,” Appl. Phys. Lett. 77, 184–186 (2000).
[Crossref]

Ide, T.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,” Appl. Phys. Lett. 85, 1326–1328 (2004).
[Crossref]

Imamoglu, A.

P. Michler, A. Kiraz, L. Zhang, C. Becher, E. Hu, and A. Imamoglu, “Laser emission from quantum dots in microdisk structures,” Appl. Phys. Lett. 77, 184–186 (2000).
[Crossref]

Iwamoto, S.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,” Appl. Phys. Lett. 85, 1326–1328 (2004).
[Crossref]

Jewell, J. L.

J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, and L. T. Florez “Vertical-cavity surface-emitting lasers: design, growth, fabrication, characterization,” IEEE J. Quantum Electron. 27, 1332–1346 (1991).
[Crossref]

Kiraz, A.

P. Michler, A. Kiraz, L. Zhang, C. Becher, E. Hu, and A. Imamoglu, “Laser emission from quantum dots in microdisk structures,” Appl. Phys. Lett. 77, 184–186 (2000).
[Crossref]

Kokubun, Y.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41, 6364–6369 (2002).
[Crossref]

Lee, P.

T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.

Lee, Y. H.

J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, and L. T. Florez “Vertical-cavity surface-emitting lasers: design, growth, fabrication, characterization,” IEEE J. Quantum Electron. 27, 1332–1346 (1991).
[Crossref]

Lemaitre, A.

B. Gayral, J. M. Gerard, A. Lemaitre, C. Dupuis, L. Manin, and J. L. Pelouard, “High-Q wet-etched GaAs microdisks containing InAs quantum boxes,” Appl. Phys. Lett. 75, 1908–1910 (1999).
[Crossref]

Levi, A. F. J.

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60, 289–291 (1992).
[Crossref]

Logan, R. A.

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60, 289–291 (1992).
[Crossref]

Luo, K. J.

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78, 3397–3399 (2001).
[Crossref]

Ma, Y.

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78, 3397–3399 (2001).
[Crossref]

H. Cao, J. Y. Xu, W. H. Xiang, Y. Ma, S.-H. Chang, S. T. Ho, and G. S. Solomon, “Optically pumped InAs quantum dot microdisk lasers,” Appl. Phys. Lett. 76, 3519–3521 (2000).
[Crossref]

Madhukar, A.

R. Heits, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, and D. Bimberg, “Temperature dependent optical properties of self-organized InAs/GaAs quantum dots,” J. Electron. Mater. 28, 520–527 (1999)
[Crossref]

Manin, L.

B. Gayral, J. M. Gerard, A. Lemaitre, C. Dupuis, L. Manin, and J. L. Pelouard, “High-Q wet-etched GaAs microdisks containing InAs quantum boxes,” Appl. Phys. Lett. 75, 1908–1910 (1999).
[Crossref]

McCall, S. L.

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60, 289–291 (1992).
[Crossref]

Michler, P.

P. Michler, A. Kiraz, L. Zhang, C. Becher, E. Hu, and A. Imamoglu, “Laser emission from quantum dots in microdisk structures,” Appl. Phys. Lett. 77, 184–186 (2000).
[Crossref]

Miyamoto, Y.

M. Asada, Y. Miyamoto, and Y Suamatsu, “Gain and Threshold of Three-Dimensional Quantum-Box Lasers,” IEEE J. of Quantum Electron. QE-22, 1915–1921 (1986).
[Crossref]

Mukhametzhanov, I.

R. Heits, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, and D. Bimberg, “Temperature dependent optical properties of self-organized InAs/GaAs quantum dots,” J. Electron. Mater. 28, 520–527 (1999)
[Crossref]

Nakagawa, A.

K. Nozaki, A. Nakagawa, D. Sano, and T. Baba, “Ultralow threshold and single-mode lasing in microgear lasers and its fusion with quasi-periodic photonic crystals,” IEEE J. Sel. Top. Quantum Electron. 9, 1355–1360 (2003).
[Crossref]

Nakaoka, T.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,” Appl. Phys. Lett. 85, 1326–1328 (2004).
[Crossref]

Nishioka, M.

J. Tatebayashi, M. Nishioka, and Y. Arakawa, “Over 1.5 µm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 78, 3469–3471 (2001).
[Crossref]

Nozaki, K.

K. Nozaki, A. Nakagawa, D. Sano, and T. Baba, “Ultralow threshold and single-mode lasing in microgear lasers and its fusion with quasi-periodic photonic crystals,” IEEE J. Sel. Top. Quantum Electron. 9, 1355–1360 (2003).
[Crossref]

O’Brien, J.

T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.

O’Brien, J. D.

T. Yang, O. Shchekin, J. D. O’Brien, and D. G. Deppe, “Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions,” Electron. Lett. 39, 1657–1658 (2003).
[Crossref]

Pearton, S. J.

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60, 289–291 (1992).
[Crossref]

Pelouard, J. L.

B. Gayral, J. M. Gerard, A. Lemaitre, C. Dupuis, L. Manin, and J. L. Pelouard, “High-Q wet-etched GaAs microdisks containing InAs quantum boxes,” Appl. Phys. Lett. 75, 1908–1910 (1999).
[Crossref]

Sakai, A.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41, 6364–6369 (2002).
[Crossref]

Sakaki, H.

Y. Arakawa and H. Sakaki, “Multidimensional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett. 40, 939–941 (1982).
[Crossref]

Sano, D.

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9, 1340–1346 (2003).
[Crossref]

K. Nozaki, A. Nakagawa, D. Sano, and T. Baba, “Ultralow threshold and single-mode lasing in microgear lasers and its fusion with quasi-periodic photonic crystals,” IEEE J. Sel. Top. Quantum Electron. 9, 1355–1360 (2003).
[Crossref]

Scherer, A.

J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, and L. T. Florez “Vertical-cavity surface-emitting lasers: design, growth, fabrication, characterization,” IEEE J. Quantum Electron. 27, 1332–1346 (1991).
[Crossref]

Shafiiha, R.

T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.

Shchekin, O.

T. Yang, O. Shchekin, J. D. O’Brien, and D. G. Deppe, “Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions,” Electron. Lett. 39, 1657–1658 (2003).
[Crossref]

T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.

Shih, M.

T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.

Slusher, R. E.

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60, 289–291 (1992).
[Crossref]

Solomon, G. S.

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78, 3397–3399 (2001).
[Crossref]

H. Cao, J. Y. Xu, W. H. Xiang, Y. Ma, S.-H. Chang, S. T. Ho, and G. S. Solomon, “Optically pumped InAs quantum dot microdisk lasers,” Appl. Phys. Lett. 76, 3519–3521 (2000).
[Crossref]

Suamatsu, Y

M. Asada, Y. Miyamoto, and Y Suamatsu, “Gain and Threshold of Three-Dimensional Quantum-Box Lasers,” IEEE J. of Quantum Electron. QE-22, 1915–1921 (1986).
[Crossref]

Tatebayashi, J.

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,” Appl. Phys. Lett. 85, 1326–1328 (2004).
[Crossref]

J. Tatebayashi, M. Nishioka, and Y. Arakawa, “Over 1.5 µm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 78, 3469–3471 (2001).
[Crossref]

Teshima, K.

M. Fijita, K. Teshima, and T. Baba, “Low-threshold continuous-wave lasing in photopumped GaInAsP microdisk lasers,” Jpn. J. Appl. Phys. 40, L875–L877 (2001).
[Crossref]

Ushigome, R.

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41, 6364–6369 (2002).
[Crossref]

M. Fujita, R. Ushigome, and T. Baba, “Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 µA,” Electorn. Lett. 36, 169–170 (2000).

Xiang, W. H.

H. Cao, J. Y. Xu, W. H. Xiang, Y. Ma, S.-H. Chang, S. T. Ho, and G. S. Solomon, “Optically pumped InAs quantum dot microdisk lasers,” Appl. Phys. Lett. 76, 3519–3521 (2000).
[Crossref]

Xu, J. Y.

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78, 3397–3399 (2001).
[Crossref]

H. Cao, J. Y. Xu, W. H. Xiang, Y. Ma, S.-H. Chang, S. T. Ho, and G. S. Solomon, “Optically pumped InAs quantum dot microdisk lasers,” Appl. Phys. Lett. 76, 3519–3521 (2000).
[Crossref]

Yang, T.

T. Yang, O. Shchekin, J. D. O’Brien, and D. G. Deppe, “Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions,” Electron. Lett. 39, 1657–1658 (2003).
[Crossref]

T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.

Zhang, L.

L. Zhang and E. Hu, “Lasing from InGaAs quantum dots in an injection microdisk,” Appl. Phys. Lett. 82, 319–321 (2003).
[Crossref]

P. Michler, A. Kiraz, L. Zhang, C. Becher, E. Hu, and A. Imamoglu, “Laser emission from quantum dots in microdisk structures,” Appl. Phys. Lett. 77, 184–186 (2000).
[Crossref]

Appl. Phys. Lett. (9)

Y. Arakawa and H. Sakaki, “Multidimensional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett. 40, 939–941 (1982).
[Crossref]

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60, 289–291 (1992).
[Crossref]

B. Gayral, J. M. Gerard, A. Lemaitre, C. Dupuis, L. Manin, and J. L. Pelouard, “High-Q wet-etched GaAs microdisks containing InAs quantum boxes,” Appl. Phys. Lett. 75, 1908–1910 (1999).
[Crossref]

H. Cao, J. Y. Xu, W. H. Xiang, Y. Ma, S.-H. Chang, S. T. Ho, and G. S. Solomon, “Optically pumped InAs quantum dot microdisk lasers,” Appl. Phys. Lett. 76, 3519–3521 (2000).
[Crossref]

P. Michler, A. Kiraz, L. Zhang, C. Becher, E. Hu, and A. Imamoglu, “Laser emission from quantum dots in microdisk structures,” Appl. Phys. Lett. 77, 184–186 (2000).
[Crossref]

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon, “Ultrafast dynamics of InAs/GaAs quantum-dot microdisk lasers,” Appl. Phys. Lett. 78, 3397–3399 (2001).
[Crossref]

L. Zhang and E. Hu, “Lasing from InGaAs quantum dots in an injection microdisk,” Appl. Phys. Lett. 82, 319–321 (2003).
[Crossref]

J. Tatebayashi, M. Nishioka, and Y. Arakawa, “Over 1.5 µm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 78, 3469–3471 (2001).
[Crossref]

T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,” Appl. Phys. Lett. 85, 1326–1328 (2004).
[Crossref]

Electorn. Lett. (1)

M. Fujita, R. Ushigome, and T. Baba, “Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40 µA,” Electorn. Lett. 36, 169–170 (2000).

Electron. Lett. (1)

T. Yang, O. Shchekin, J. D. O’Brien, and D. G. Deppe, “Room temperature, continuous-wave lasing near 1300 nm in microdisks with quantum dot active regions,” Electron. Lett. 39, 1657–1658 (2003).
[Crossref]

IEEE J. of Quantum Electron. (1)

M. Asada, Y. Miyamoto, and Y Suamatsu, “Gain and Threshold of Three-Dimensional Quantum-Box Lasers,” IEEE J. of Quantum Electron. QE-22, 1915–1921 (1986).
[Crossref]

IEEE J. Quantum Electron. (1)

J. L. Jewell, J. P. Harbison, A. Scherer, Y. H. Lee, and L. T. Florez “Vertical-cavity surface-emitting lasers: design, growth, fabrication, characterization,” IEEE J. Quantum Electron. 27, 1332–1346 (1991).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (2)

K. Nozaki, A. Nakagawa, D. Sano, and T. Baba, “Ultralow threshold and single-mode lasing in microgear lasers and its fusion with quasi-periodic photonic crystals,” IEEE J. Sel. Top. Quantum Electron. 9, 1355–1360 (2003).
[Crossref]

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9, 1340–1346 (2003).
[Crossref]

J. Electron. Mater. (1)

R. Heits, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, and D. Bimberg, “Temperature dependent optical properties of self-organized InAs/GaAs quantum dots,” J. Electron. Mater. 28, 520–527 (1999)
[Crossref]

Jpn. J. Appl. Phys. (2)

M. Fijita, K. Teshima, and T. Baba, “Low-threshold continuous-wave lasing in photopumped GaInAsP microdisk lasers,” Jpn. J. Appl. Phys. 40, L875–L877 (2001).
[Crossref]

R. Ushigome, M. Fujita, A. Sakai, T. Baba, and Y. Kokubun, “GaInAsP microdisk injection laser with benzocyclobutene polymer cladding and its athermal effect,” Jpn. J. Appl. Phys. 41, 6364–6369 (2002).
[Crossref]

Other (1)

T. Yang, J. Cao, P. Lee, M. Shih, R. Shafiiha, S. Farrell, J. O’Brien, O. Shchekin, and D. Deppe, “Microdisks with quantum dot active regions lasing near 1300 nm at room temperature,” in Tech. Dig. Conf. on Lasers and Electro-Optics, (The Optical Society of America, Washington, DC, 2003), CWK3.

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Figures (6)

Fig. 1.
Fig. 1. Scanning electron microscope image of 4.5-µm-diameter QD MDL.
Fig. 2.
Fig. 2. RT lasing characteristic at λ=1280 nm. Inset shows lasing spectrum at P eff=170 µW. Dotted-line is RT photoluminescence spectrum of the QD wafer.
Fig. 3.
Fig. 3. Lasing spectra measured with a resolution of 0.1 nm.
Fig. 4.
Fig. 4. Lasing wavelength with effective pump power.
Fig. 5.
Fig. 5. Temperature dependence of effective threshold power (black) and slope efficiency (white). The data at RT (290 K) is obtained before measuring the temperature dependence.
Fig. 6.
Fig. 6. Temperature dependence of lasing wavelength. Dotted line is theoretical calculation.

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