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Diffractive elements with novel antireflection film stacks

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Abstract

Antireflection coatings fabricated between the substrate and the diffractive microstructure are shown to reduce Fresnel losses effectively, especially for high-index substrates used in the infrared region, if the diffractive structure and the antireflection stack are designed simultaneously. A substantial reduction of the Fabry-Perot effect caused by the high-index substrate is observed by using antireflection layers with films thicker than the normal quarter-wave films.

©2004 Optical Society of America

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Figures (5)

Fig. 1.
Fig. 1. Two alternative ways to combine a diffractive microstructure with a thin-film AR structure: (a) the microstructure is over-coated with a thin film and (b) the AR coating is fabricated underneath the microstructure.
Fig. 2.
Fig. 2. Transmission of a perfectly flat Si substrate (dashed line) as a function of its thickness and the influence of AR-coatings on both sides. Green line: Design 1. Red line: Design 2. Blue line: design 3.
Fig. 3.
Fig. 3. Diffraction efficiencies of central transmitted orders of the 1→2 beam-splitter. Substrate is AR-coated on the both sides. Blue bars: Grating without AR-layers. Green bars: Optimal AR stack with a standard grating. Red bars: Simultaneously optimized AR and grating layer thicknesses.
Fig. 4.
Fig. 4. Diffraction efficiencies ηm of the central orders of 1→5 beam splitters. Substrate is AR-coated on the both sides. Blue bars: SiO2 grating on a Si substrate without AR-layers. Green bars: Optimal AR-layer stack with a standard grating. Red bars: Simultaneously optimized AR and grating layer thicknesses.
Fig. 5.
Fig. 5. Transmitted diffraction efficiencies of 4-level staircase gratings. Substrate is AR-coated on the both sides. Blue: Grating without AR-layers. Green: Optimized AR stacks. Red: AR-layers and grating thickness scale optimized simultaneously.

Tables (1)

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Table 1. Three AR coating designs consisting of a Al2O3 layer with n=1.6 and thickness h 1, and a HfO2 layer (located next to the Si-substrate) with n=1.9 and thickness h 2.

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