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Optica Publishing Group
  • Journal of the Optical Society of Korea
  • Vol. 5,
  • Issue 3,
  • pp. 83-89
  • (2001)

Quasi-Continuous Operation of 1.55- μm Vertical-Cavity Surface-Emitting Lasers by Wafer Fusion

Open Access Open Access

Abstract

Room temperature quasi-continuous operation is achieved near 1556 nm with threshold current as low as 2.2 mA from a 5.6-<TEX>${\mu}{\textrm}{m}$</TEX> oxide-aperture vertical-cavity surface-emitting laser. Wafer fusion techniques are employed to combine the GaAs/AlGaAs mirror and the InP-based InGaAs/InGaAsP active layer. In this structure, an <TEX>$Al_x/O_y$</TEX>/GaAs distributed bragg reflector and intra-cavity contacts are used to reduce free carrier absorption.

© 2001 Optical Society of Korea

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