Abstract

Steady-state and transient behavior of the longitudinally pumped semiconductor laser is theoretically investigated by using a rate-equation model with distributed gain and photon density. Conditions necessary for bistable operation are derived. Dependencies of such major switching characteristics as turn-on and turn-off powers, delay, and rise times on laser parameters are examined. Influences of spontaneous radiation, impurities, and Auger recombination are studied. The results offer an explanation for the observed nonlinear behavior of face-pumped lasers.

© 1987 Optical Society of America

Dynamic behavior of bistability in a laser with a saturable absorber

E. Arimondo, D. Dangoisse, C. Gabbanini, E. Menchi, and F. Papoff
J. Opt. Soc. Am. B 4(6) 892-899 (1987)

Comprehensive interpretation of passive Q switching and optical bistability in a CO₂ laser with an intracavity saturable absorber

Maki Tachikawa, Kazuhito Tanii, and Tadao Shimizu
J. Opt. Soc. Am. B 4(3) 387-395 (1987)

Influence of surface recombination on optically bistable semiconductor devices

D. Frank and B. S. Wherrett
J. Opt. Soc. Am. B 4(1) 25-29 (1987)

Formation mechanism of optical bistability in end-pumped quasi-three-level Tm, Ho:YLF lasers

Xinlu Zhang, Li Li, Yang Zheng, and Yuezhu Wang
J. Opt. Soc. Am. B 26(12) 2434-2439 (2009)

Bistability in cavities with erbium-doped fiber amplifiers due to bidirectional pump-beam interference

Yuri Mitnick, Moshe Horowitz, and Baruch Fischer
J. Opt. Soc. Am. B 14(8) 2079-2082 (1997)