Abstract

A quasi-phase-matching (QPM) stack of 25 GaAs plates with better surface flatness and reduced internal loss has been successfully fabricated using the room-temperature-bonding technique, which is for a high-power and highly efficient wavelength-conversion device in the mid-infrared region. This is accomplished owing to an improved process in which GaAs plates are set on ${\rm Y}_3{\rm Al}_5{{\rm O}_{12}}$ crystals with the flat surfaces polished to laser grade. The loss coefficient and the loss per interface of the fabricated 2.1 mm long, 25-plate-stacked GaAs QPM device are ${2.1}\;{{\rm cm}^{- 1}}$ and 1.8%, respectively, which are 70% smaller than those of a 0.92 mm long, 11-plate stack fabricated with the previous process.

© 2021 Optical Society of America

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