Abstract

Using frequency-domain nonlinear spectroscopy methods, we find relatively broad ($\sim 20–30\mathrm{meV}$) resonances from quantum confined electron–hole pairs in an ensemble of InGaN disks in GaN nanowires that persist without significant broadening up to room temperature in the nonlinear absorption spectrum. Under these growth conditions, we find that the kinetics related to the nonlinear signal are dominated by metastable traps with decay rates of microseconds at low temperatures, as evidenced in part by high-frequency-resolution scans within the broad absorption resonances. The data reveal ultranarrow population pulsation resonances with linewidths that indicate the slow decay rate of the metastable traps.

© 2017 Optical Society of America

Direct evidence of recombination between electrons in InGaN quantum discs and holes in p-type GaN

Xiaoxiao Sun, Xinqiang Wang, Ping Wang, Tao Wang, Bowen Sheng, Xiantong Zheng, Mo Li, Jian Zhang, Xuelin Yang, Fujun Xu, Weikun Ge, and Bo Shen
Opt. Express 25(24) 30664-30671 (2017)

Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures

D. S. Chemla and D. A. B. Miller
J. Opt. Soc. Am. B 2(7) 1155-1173 (1985)

High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes

Barsha Jain, Ravi Teja Velpula, Ha Quoc Thang Bui, Hoang-Duy Nguyen, Trupti Ranjan Lenka, Truong Khang Nguyen, and Hieu Pham Trung Nguyen
Opt. Express 28(1) 665-675 (2020)

Nonlinear-optical properties of semiconductor quantum dots and their correlation with the precipitation stage

S. V. Gaponenko, U. Woggon, M. Saleh, W. Langbein, A. Uhrig, M. Müller, and C. Klingshirn
J. Opt. Soc. Am. B 10(10) 1947-1954 (1993)

Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length

Y. J. Wang, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, X. D. Shan, and D. P. Yu
Opt. Express 14(26) 13151-13157 (2006)