Abstract

An analytical and numerical study of the sensitivity of a one-dimensional evanescently coupled array of real index-guided (no antiguiding) semiconductor lasers under random device width variation is carried out with the aim of characterizing the far-field disturbance as a function of the variance of d (device active width), the number of devices n, and the interelement coupling κ. It is shown that the sensitivity of the far-field amplitude distribution increases approximately linearly with n up to n ≃ 20 with a given κ. A simple expression is derived that relates the maximum allowable variance of device widths for a given n under the constraint of nondegeneracy of the lowest-order eigenvalues. The size of an array that may be expected to remain in the fundamental mode under given perturbations is deduced. It is predicted that if this value is exceeded the array will break up into domains of in-phase regions separated by π rad in phase, and a formula is derived that gives the size of such domains.

© 1995 Optical Society of America

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