Abstract
We show that two antiguiding active slabs with appropriate spacing provide higher gain than a single homogeneous active slab for the same pumping rate. Using a reactive-surface approximation, many results are written in analytical form. This discussion is applicable to gain-guided semiconductor lasers in the junction plane and also in the plane perpendicular to the junction in the (rare) cases when a reduction in band gap involves a refractive-index decrease (e.g., active InAs on GaSb substrate).
© 1986 Optical Society of America
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