Abstract
Hybrid Silicon and Lithium Niobate photonic integration platform has emerged as a promising candidate to combine the scalability of silicon photonic with the high modulation performance of Lithium Niobate. Here, we report a hybrid Silicon and Lithium Niobate Mach–Zehnder modulator integrated with a thermal-optical bias controller and an on-chip RF terminator. The device demonstrates high electro-optical bandwidth of up to 60 GHz, low half-wave voltage of 2.25 V, and low optical on-chip loss of 2 dB, DC biasing half-wave voltage of 1.93 V (or biasing power of 23.77 mW), with reliable and stable biasing characteristics. On-off keying modulation up to 100 Gbit/s and four-level pulse amplitude modulation up to 120 Gbit/s has been demonstrated with excellent performance. The scheme, with its low modulation voltage, low biasing power consumption, low optical insertion loss, large bandwidth, and its flexibility and simplicity of designing, packaging, and testing, can provide an excellent platform on which future high performance complex optical modulators can be developed.
PDF Article
More Like This
Bias-drift-free Mach–Zehnder modulators based on a heterogeneous silicon and lithium niobate platform
Shihao Sun, Mingbo He, Mengyue Xu, Shengqian Gao, Ziyan Chen, Xian Zhang, Ziliang Ruan, Xiong Wu, Lidan Zhou, Lin Liu, Chao Lu, Changjian Guo, Liu Liu, Siyuan Yu, and Xinlun Cai
Photon. Res. 8(12) 1958-1963 (2020)
High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform
Pu Zhang, Haijin Huang, Yongheng Jiang, Xu Han, Huifu Xiao, Andreas Frigg, Thach G. Nguyen, Andreas Boes, Guanghui Ren, Yikai Su, Yonghui Tian, and Arnan Mitchell
Opt. Lett. 46(23) 5986-5989 (2021)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription