Abstract

High-speed mid-wave infrared (MWIR) photodetectors have applications in the areas such as free space optical communication and frequency comb spectroscopy. However, most of the research on the MWIR photodetectors have been focused on how to increase the quantum efficiency and reduce the dark current, in order to improve the detectivity (D^*), and the 3 dB bandwidth performance of the corresponding MWIR photodetectors is still not fully studied. In this work, we report and characterize a MWIR interband cascade photodetector based on InAs/GaAsSb type-II superlattice with a 50% cutoff wavelength at ∼5.3 μm at 300 K. The 3 dB cutoff frequency is 2.4 GHz at 300 K, for a 40 μm circular diameter device under −5 V applied bias. Limitations on the detector high-speed performance are also discussed.

High-speed mid-wave infrared interband cascade photodetector at room temperature

Zhiyang Xie, Jian Huang, Xuliang Chai, Zhuo Deng, Yaojiang Chen, Qi Lu, Zhicheng Xu, Jianxin Chen, Yi Zhou, and Baile Chen
Opt. Express 28(24) 36915-36923 (2020)

Influence of GaAs and GaSb substrates on detection parameters of InAs/GaSb superlattice-based mid-infrared interband cascade photodetectors

Klaudia Hackiewicz, Małgorzata Kopytko, Jarosław Rutkowski, Piotr Martyniuk, and Łukasz Ciura
Appl. Opt. 59(17) E42-E47 (2020)

Upside-down InAs/InAs_1-xSb_x type-II superlattice-based nBn mid-infrared photodetectors with an AlGaAsSb quaternary alloy barrier

Gongrong Deng, Xinbo Song, Mingguo Fan, Tingting Xiao, Zhibing Luo, Niu Chen, Wenyun Yang, and Yiyun Zhang
Opt. Express 28(9) 13616-13624 (2020)

Bias-selectable three-color short-, extended-short-, and mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices

Abbas Haddadi and Manijeh Razeghi
Opt. Lett. 42(21) 4275-4278 (2017)

Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection

Fangfang Wang, Jianxin Chen, Zhicheng Xu, Yi Zhou, and Li He
Opt. Express 25(3) 1629-1635 (2017)