Abstract

For 64-Gbaud operation and beyond, we developed a power efficient high-bandwidth coherent driver modulator composed of a linear four-channel ultra-low power CMOS driver IC and an InP-based dual-polarization IQ modulator. The CMOS driver was fabricated in 65-nm CMOS technology and showed power dissipation of <1 W owing to the use of an open-drain configuration and a stacked current-mode architecture. Moreover, by optimizing the temperature of the thermoelectric cooler that controls the modulator operating temperature, the coherent driver modulator achieved consumed power of <2.5 W at case temperatures of −5 to 75 °C and <2.8 W under −5 to 85 °C. As far as we know, this is the lowest power dissipation for a coherent driver modulator with an InP modulator chip. In addition, by employing a circuit that suppresses temperature dependence of RF characteristics in the CMOS driver, we achieved the 3-dB electro-optical bandwidth of >44 GHz and the variation of 2.0 GHz under the 25° to 85 °C condition. Furthermore, we obtained good back-to-back bit-error-rate performance in up to dual polarization 80-Gbaud 16-QAM modulation.

113Gb/s (10 x 11.3Gb/s) ultra-low power EAM driver array

Renato Vaernewyck, Johan Bauwelinck, Xin Yin, Ramses Pierco, Jochen Verbrugghe, Guy Torfs, Zhisheng Li, Xing-Zhi Qiu, Jan Vandewege, Richard Cronin, Anna Borghesani, and David Moodie
Opt. Express 21(1) 256-262 (2013)

10 Gb/s InP-based Mach-Zehnder modulator for operation at 2 μm wavelengths

M. U. Sadiq, M. R. Gleeson, N. Ye, J. O’Callaghan, P. Morrissey, H. Y. Zhang, K. Thomas, A. Gocalinska, E. Pelucchi, F. C. G. Gunning, B. Roycroft, F. H. Peters, and B. Corbett
Opt. Express 23(9) 10905-10913 (2015)

Ultra-low-energy all-CMOS modulator integrated with driver

Xuezhe Zheng, Jon Lexau, Ying Luo, Hiren Thacker, Thierry Pinguet, Attila Mekis, Guoliang Li, Jing Shi, Philip Amberg, Nathaniel Pinckney, Kannan Raj, Ron Ho, John E. Cunningham, and Ashok V. Krishnamoorthy
Opt. Express 18(3) 3059-3070 (2010)

A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer

A. V. Krishnamoorthy, X. Zheng, D. Feng, J. Lexau, J. F. Buckwalter, H. D. Thacker, F. Liu, Y. Luo, E. Chang, P. Amberg, I. Shubin, S. S. Djordjevic, J. H. Lee, S. Lin, H. Liang, A. Abed, R. Shafiiha, K. Raj, R. Ho, M. Asghari, and J. E. Cunningham
Opt. Express 22(10) 12289-12295 (2014)

High-power, low-coherence laser driver facility

Yanqi Gao, Lailin Ji, Xiaohui Zhao, Yong Cui, Daxing Rao, Wei Feng, Lan Xia, Dong Liu, Tao Wang, Haitao Shi, Fujian Li, Jia Liu, Du Pengyuan, Xiaoli Li, Jiani Liu, Tianxiong Zhang, Chong Shan, Yilin Hua, Weixin Ma, Zhan Sui, Jian Zhu, Wenbing Pei, Sizu Fu, Xun Sun, and Xianfeng Chen
Opt. Lett. 45(24) 6839-6842 (2020)