Abstract

The linearity of high power photodetectors is the limiting factor to the dynamic range performance of analog optical links and microwave photonics applications. In this work, we characterized the third order intermodulation distortion (IMD3) of a uni-traveling carrier photodiode with InGaAs/GaAsSb type-II multiple quantum wells absorber. The 10 μm diameter photodiode shows a third order output intercept point of 36.6 dBm at 200 MHz and 12.9 dBm at 25 GHz, under reverse bias of −5 V and photo current of 15 mA. Combining with the measured device parameters, an equivalent circuit model based simulation is carried out, and the general trend of the simulated IMD3 is consistent with the measurement results. By separately involving the nonlinear mechanisms, the source of the nonlinearity is studied in detail.

Measurement and Modeling of High-Linearity Modified Uni-Traveling Carrier Photodiode with Highly-Doped Absorber

Huapu Pan, Zhi Li, Andreas Beling, and Joe C. Campbell
Opt. Express 17(22) 20221-20226 (2009)

Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes

Yaojiang Chen, Xuyi Zhao, Jian Huang, Zhuo Deng, Chunfang Cao, Qian Gong, and Baile Chen
Opt. Express 26(26) 35034-35045 (2018)

Uni-traveling-carrier variable confinement waveguide photodiodes

Jonathan Klamkin, Shannon M. Madison, Douglas C. Oakley, Antonio Napoleone, Frederick J. O’Donnell, Michael Sheehan, Leo J. Missaggia, Janice M. Caissie, Jason J. Plant, and Paul W. Juodawlkis
Opt. Express 19(11) 10199-10205 (2011)

High-speed uni-traveling carrier photodiode for 2  μm wavelength application

Yaojiang Chen, Zhiyang Xie, Jian Huang, Zhuo Deng, and Baile Chen
Optica 6(7) 884-889 (2019)

High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode

Zhi Li, Yang Fu, Molly Piels, Huapu Pan, Andreas Beling, John E. Bowers, and Joe C. Campbell
Opt. Express 19(26) B385-B390 (2011)