Abstract

A Si-Ge waveguide avalanche photodiode with extremely high temperature stability is demonstrated. The breakdown voltage increases ∼4.2 mV/°C, bandwidth reduces ∼0.09%/°C, and gain-bandwidth product reduces ∼0.24%/°C with temperature increased from 30 °C to 90 °C. Additionally, it maintains superior performance with low breakdown voltage of ∼10 V, high multiplication gain of >15, high bandwidth of ∼24.6 GHz, high gain-bandwidth product of >240 GHz, high internal quantum efficiency of ∼100%, and clear eye diagrams with 64 Gbps PAM4 modulation at 90 °C.

25  Gbps low-voltage waveguide Si–Ge avalanche photodiode

Zhihong Huang, Cheng Li, Di Liang, Kunzhi Yu, Charles Santori, Marco Fiorentino, Wayne Sorin, Samuel Palermo, and Raymond G. Beausoleil
Optica 3(8) 793-798 (2016)

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

Nicholas J. D. Martinez, Christopher T. Derose, Reinhard W. Brock, Andrew L. Starbuck, Andrew T. Pomerene, Anthony L. Lentine, Douglas C. Trotter, and Paul S. Davids
Opt. Express 24(17) 19072-19081 (2016)

64  Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors

Binhao Wang, Zhihong Huang, Yuan Yuan, Di Liang, Xiaoge Zeng, Marco Fiorentino, and Raymond G. Beausoleil
Photon. Res. 8(7) 1118-1123 (2020)

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Yuluan Xiang, Hengzhen Cao, Chaoyue Liu, and Daoxin Dai
Opt. Express 30(7) 11288-11297 (2022)

High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz

Yuluan Xiang, Hengzhen Cao, Chaoyue Liu, Jingshu Guo, and Daoxin Dai
Optica 9(7) 762-769 (2022)