Abstract

Electrically parallel and optically uncoupled triple and septuple oxide confined vertical-cavity surface-emitting laser (VCSEL) arrays emitting at about 980 nm where each VCSEL has an oxide aperture diameter (ϕ) of ∼7.5 μm transmit data at 40 Gbps at room temperature (RT) in a back-to-back test configuration using standard two-level non-return-to-zero pulse amplitude modulation at bias current densities (J) of 17.4 and 10.3 kA/cm², respectively. Reference single VCSELs processed with the VCSEL arrays on the same wafer pieces with ϕ ∼7.5, 13.5, and 19.5 μm transmit data at up to 45, 40, and 35 Gbps at RT at J of 20.4, 13.3, and 10.7 kA/cm², respectively, where the latter two single VCSELs have total emitting areas nearly equal to the total additive emitting areas of the triple and septuple VCSEL arrays, respectively. The RT optical output power at J ∼10 and 15 kA/cm² is 11.4 and 17.2 mW for the triple arrays and 31.1 and 45.9 mW for the septuple arrays, respectively. By increasing the number of emitters in an array for a fixed ϕ per VCSEL from 3 to 7 we increase the total optical output power and simultaneously we decrease the J required for error free digital data transmission at 40 Gbps.

Impact of oxide aperture diameter on optical output power, spectral emission, and bandwidth for 980 nm VCSELs

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All-optical memory operation of 980-nm polarization bistable VCSEL for 20-Gb/s PRBS RZ and 40-Gb/s NRZ data signals

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Low-voltage, high-speed and compact electro-absorption modulator laterally integrated with 980-nm VCSEL

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Baseline 1300 nm dilute nitride VCSELs

M. Gębski, D. Dontsova, N. Haghighi, K. Nunna, R. Yanka, A. Johnson, R. Pelzel, and J. A. Lott
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30 Gbps 4-PAM transmission over 200 m of MMF using an 850 nm VCSEL

Krzysztof Szczerba, Petter Westbergh, Johnny Karout, Johan Gustavsson, Åsa Haglund, Magnus Karlsson, Peter Andrekson, Erik Agrell, and Anders Larsson
Opt. Express 19(26) B203-B208 (2011)