Abstract

We report a zero-bias photovaractor that operates up to 60 GHz. The capacitance change is based on the decrease of depletion width and the steep increase of the effective area after illumination. With photocurrent of 12 mA, the reactance at 60 GHz is changed by 280 times relative to the dark condition. S11 parameter fitting shows that the capacitance of a 50-μm diameter device increases by 37 times after illumination. Good agreement is achieved between theory and measured results.

© 2017 IEEE

Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs

Yu-Sheng Liao, Jin-Wei Shi, Y.-S. Wu, Hao-Chung Kuo, M. Feng, and Gong-Ru Lin
Opt. Express 14(12) 5031-5037 (2006)

Nanosecond single-photon timing with InGaAs/InP photodiodes

F. Zappa, A. Lacaita, S. Cova, and P. Webb
Opt. Lett. 19(11) 846-848 (1994)

Design of modified InGaAs/InP one-sided junction photodiodes with improved response at high light intensity

Jie Xu, Xiupu Zhang, and Ahmed Kishk
Appl. Opt. 57(31) 9365-9374 (2018)

InGaAs–InP avalanche photodiodes with dark current limited by generation-recombination

Yanli Zhao, Dongdong Zhang, Long Qin, Qi Tang, Rui Hua Wu, Jianjun Liu, Youping Zhang, Hong Zhang, Xiuhua Yuan, and Wen Liu
Opt. Express 19(9) 8546-8556 (2011)

Responsibility optimization of a high-speed InP/InGaAs photodetector with a back reflector structure

Yuxuan Wang, Guanyu Li, Xiaowen Gu, Yuechan Kong, Youdou Zheng, and Yi Shi
Opt. Express 30(4) 4919-4929 (2022)