Abstract
Mid-infrared photodetector based on submonolayer (SML) quantum dot quantum cascade structure monolithically grown on silicon substrate has been demonstrated in this paper. Both the optical and electrical characteristics of the SML quantum dot quantum cascade photodetectors (QD-QCD) were analyzed quantitatively. The performances of these devices were compared with that on native GaAs substrate. A large resistance-area (R0A) product of 1.13 × 107 Ω.cm2 is achieved at 77 K for the silicon-based devices, which is only roughly one order less than that on GaAs substrate. The device shows a normal-incident peak responsivity of 0.59 mA/W under zero bias at the wavelength of 6.2 μm at 77 K, indicating a photovoltaic operation mode. Johnson noise limited specific detectivity is 3 × 1010 cm•Hz1/2/W at 77 K, with photoresponse up to 100 K. These results suggest that the silicon-based QD-QCD in this paper is a very promising candidate for large format mid-infrared focal plane array and mid-infrared silicon photonics applications.
© 2018 IEEE
PDF Article
More Like This
Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates
Yating Wan, Zeyu Zhang, Ruilin Chao, Justin Norman, Daehwan Jung, Chen Shang, Qiang Li, MJ Kennedy, Di Liang, Chong Zhang, Jin-Wei Shi, Arthur C. Gossard, Kei May Lau, and John E. Bowers
Opt. Express 25(22) 27715-27723 (2017)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription