Abstract

A nanoantenna-based plasmonic photodetector is proposed and investigated theoretically. An array of interconnected nanomonopoles on a film of InGaAs on n-doped InP is modeled. The infrared (∼1550 nm) responsivity of the structure can reach ∼200 mA/W for a 20-nm-thick InGaAs layer. The optimum 3-dB electrical bandwidth of the device is calculated to be ∼1 THz for the case of a 20-nm-thick InGaAs layer and a 4 × 4 nanomonopole array. The electrical bandwidth is shown to increase by decreasing the number of elements in the array. A simple linear model for the total resistance of the structure is proposed and validated. The total resistance increases by increasing the thickness of the InGaAs layer and by decreasing the number of array elements.

© 2016 IEEE

Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors

Shaoqi Feng, Yu Geng, Kei May Lau, and Andrew W. Poon
Opt. Lett. 37(19) 4035-4037 (2012)

Electrostatic impacts of plasmonic structure on the performance of monolithically integrated hybrid III-V/Si waveguide-coupled photodetectors

Q. Ding, S. Sant, and A. Schenk
OSA Continuum 4(3) 953-965 (2021)

Plasmonic internal-photoemission-based Si photodetector design suitable for optical communication

Faramarz Alihosseini, Aref Rasoulzadeh Zali, Tavakol Pakizeh, and Hesam Zandi
Appl. Opt. 61(23) 6939-6946 (2022)

Bufferless III–V photodetectors directly grown on (001) silicon-on-insulators

Ying Xue, Yu Han, Yi Wang, Zunyue Zhang, Hon Ki Tsang, and Kei May Lau
Opt. Lett. 45(7) 1754-1757 (2020)

Surface dark current mechanisms in III-V infrared photodetectors [Invited]

B. T. Marozas, W. D. Hughes, X. Du, D. E. Sidor, G. R. Savich, and G. W. Wicks
Opt. Mater. Express 8(6) 1419-1424 (2018)