Abstract

We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of $2 \times 10^{14} {\rm cm}^{-3}$ and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at −26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm⁻² at −20 V at 200 K.

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