Abstract

We report a high-performance germanium waveguide photodetectors (WPDs) without doping in germanium or direct metal contacts on germanium, grown on and contacted through a silicon p-i-n diode structure. Wafer-scale measurements demonstrate high responsivities larger than 1.0 A/W across the C-band and low dark current of ∼3 nA at –1 V and ∼8 nA at –2 V. Owing to its small dimensions, the Ge WPD exhibits a high optoelectrical 3-dB bandwidth of 20 and 27 GHz at low-bias voltages of –1 and –2 V, respectively, which are sufficient for operation at 28 Gb/s. The reduced processing complexity at the tungsten contact plug module combined with the high responsivity makes these Ge WPD devices particularly attractive for emerging low-cost CMOS-Si photonics transceivers

© 2014 IEEE

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