Abstract
We report on the experimental demonstration of a GaAs IQ modulator. The device consists of two
“nested” Mach–Zehnder modulators for the inphase and quadrature component and is operated at a
symbol rate of 25 GBd. Using QPSK, 16QAM, 32QAM and 64QAM, data rates of up to 150 Gbit/s were encoded on a
single carrier in one polarization. The individual Mach–Zehnder modulators, and hence, the IQ-modulator have an
electro-optic 3 dB bandwidth of 27 GHz and a 6 dB bandwidth larger than 35 GHz. The extinction
ratio of the Mach–Zehnder exceeds 20 dB. The devices exhibit small footprint of
2 mm × 40 mm and can be integrated on large-area GaAs wafers using high-yield fabrication
processes while providing performance similar to established lithium niobate devices.
© 2013 EU
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