Abstract
Novel electro-optic modulators in compound semiconductor epilayers using substrate removal techniques
are reported. Epilayer consists of a p-i-n junction in which
$i$
layer is composed of an InGaAlAs/InAlAs MQW. This creates an optical mode with very strong vertical confinement and
overlapping very well with the large electric field of the reverse biased p-i-n junction. This approach combined with
the large quadratic electro-optic coefficient due to MQW improves efficiency of modulation significantly.
Mach–Zehnder electro-optic modulators fabricated using this approach has 0.2 V (0.6 V) V
$_{\pi}$
for 3 (1) mm long electrodes at 1.55 μm under push
pull drive corresponding to record modulation efficiency of 0.06 V·cm.
© 2013 IEEE
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