Abstract

We demonstrate a novel InP-based photodiode structure with large active diameter (55 μm) for > 25 Gbit/s operation at optical wavelengths which range from 0.85 to 1.55 μm. By utilizing the large absorption constant (>3 μm $^{-1}$ ) of In $_{0.53}$ Ga $_{0.47}$ As-based p-type absorption layer at 0.85 μm wavelength excitation, the slow hole transport can be eliminated in our structure and the tradeoff between RC-limited bandwidth and carrier transient time can be greatly released due to the excellent characteristics of electron transport in the intrinsic and thick In $_{0.53}$ Ga $_{0.47}$ As layer (∼4 μm). Furthermore, in order to minimize the serious surface (absorption) recombination in the top p-type In $_{0.53}$ Ga $_{0.47}$ As absorption layer, an additional p-type In $_{0.52}$ Al $_{x}$ Ga $_{0.48{-}x}$ As-graded bandgap layer (GBL) is grown above it. Such a GBL cannot only provide uniform photoabsorption profile, but also accelerates the electron diffusion process. Under –1 ${\rm V}$ bias, these devices can achieve high-speed (14 and 22 GHz), and high responsivity (0.25 and 0.9 A/W), at 0.85 and 1.55 μm wavelength operation, respectively. Clear eye-opening (error-free) with data rate up to around 30 Gbit/s have also been demonstrated at both wavelengths.

© 2013 IEEE

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