Abstract
We developed a low-polarization-dependent silica- based waveguide, which can be
monolithically integrated with a silicon (Si) waveguide device on a silicon-on-insulator (SOI)
substrate. For the monolithic integration, silica-based materials must be deposited at low
temperature in order not to damage Si waveguide devices. Due to this low-temperature fabrication
method, however, the silica films exhibit high residual stress, resulting in high material
birefringence. In order to compensate for this birefringence, we introduce a multi-layer core
structure. First, we design the structure taking the monolithic integration with the Si waveguide
devices into account. Then, the designed waveguides and arrayed-waveguide gratings (AWGs) are
fabricated using low-temperature fabrication processes. Next, we experimentally confirm that the
waveguide exhibits low waveguide birefringence. In addition, we monolithically integrate the AWG
and Si waveguide devices.
© 2013 IEEE
PDF Article
More Like This
Cited By
Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.