Abstract
In this review article, we describe group-III nitride laser diodes that emit light in the
green spectral range, using epitaxial structures grown on gallium nitride (GaN) substrates
with c- and semipolar-plane orientations. We address the motivation for these lasers, the
challenges faced in creating them, and the progress made in this field to date. Different
structural design choices are described, taking into account specific material properties and
crystal growth requirements for these orientations. We review various properties of the
materials involved, including optical gain, optical confinement, internal optical losses and
carrier injection. We also discuss mechanical strain during the growth of active and passive
regions, and the way in which it limits the structural design. Various aspects of laser chip
fabrication are discussed, including self-aligned ridge waveguides and facet formation.
Finally, we outline the status of green laser reliability and challenges in this area.
© 2011 IEEE
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