Abstract
In this theoretical study we investigate the efficiency potential of
monolithic white light emitting diodes (LEDs) that are free of wavelength-converting
phosphors and are based solely on the InGaN material system. For that purpose
we develop a numerical model that handles multiple active layers of different
emission wavelength and takes photon reabsorption and -emission as well as
internal non-radiative and optical losses into account. It is applied both
to thin film structures as well as novel nanorod LEDs featuring disc-like
active layers. In both cases, the active layers may either consist of multiple
thin quantum wells or a single thick, bulk-like InGaN layer.
© 2012 IEEE
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