Abstract
We report the high-frequency modulation of individual pixels in 8 × 8
arrays of III-nitride-based micro-pixellated light-emitting diodes, where the pixels
within the array range from 14 to 84 μm in diameter. The peak emission wavelengths
of the devices are 370, 405, 450 and 520 nm, respectively. Smaller area micro-LED pixels
generally exhibit higher modulation bandwidths than their larger area counterparts,
which is attributed to their ability to be driven at higher current densities. The
highest optical -3 dB modulation bandwidths from these devices are shown to be in
excess of 400 MHz, which, to our knowledge, are the highest bandwidths yet reported for
GaN LEDs. These devices are also integrated with a complementary
metal-oxide-semiconductor (CMOS) driver array chip, allowing for simple computer control
of individual micro-LED pixels. The bandwidth of the integrated micro-LED/CMOS pixels is
shown to be up to 185 MHz; data transmission at bit rates up to 512 Mbit/s is
demonstrated using on-off keying non return-to-zero modulation with a bit-error ratio of
less than 1 × 10<sup>-10</sup>, using a 450 nm-emitting 24 μm diameter
CMOS-controlled micro-LED. As the CMOS chip allows for up to 16 independent data inputs,
this device demonstrates the potential for multi-Gigabit/s parallel data transmission
using CMOS-controlled micro-LEDs.
© 2011 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy