Abstract
We have designed evanescent semiconductor active optical isolators to realize
lower forward transparent current in transverse electric (TE) mode integrable
semiconductor active optical isolators with 9.3 dB/mm optical isolation. Evanescent
semiconductor active optical isolators are composed of a semiconductor optical amplifier
waveguide with an InGaAsP waveguide layers having an Fe layer at its sidewall upon an
MQW active layer, allowing TE-mode optical isolation to be realized without etching the
MQW active layer unlike conventional TE-mode semiconductor active optical isolators.
Evanescent-mode optical isolators enable higher internal quantum efficiency and lower
transparent current, compared with conventional TE-mode optical isolators. Furthermore,
it was found that the evanescent-mode optical isolators had higher 3 dB saturation
output power.
© 2010 IEEE
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