Abstract
A parameter-extraction approach for small-signal model of the vertical-cavity
surface emitting lasers (VCSELs), which combines the analytical approach and empirical
optimization procedure, is developed in this paper. The cutoff operation of the VCSELs
is utilized to extract the values of the pad capacitances, feedline inductance by using
a set of closed form expressions derived from cutoff mode input reflection coefficient
on wafer measurement. A semianalytical method has been used to determine the extrinsic
resistance, and intrinsic oxide aperture junction resistance and capacitance under
above-threshold bias condition. An excellent fit between measured and simulated input
reflection coefficients under cutoff and above-threshold biased condition in the
frequency range of 50 MHz-20 GHz is obtained for VCSELs with different oxide-confined
aperture size over a wide range of bias points.
© 2010 IEEE
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