Abstract
The linearity performance of a back-illuminated InGaAs/InP modified uni-traveling
carrier photodiode with a highly doped p-type absorber is characterized using three-tone
and bias modulation measurement techniques. The bias modulation measurement is used to
determine the voltage-dependent relative responsivity, ${\cal R}({\bf V})$, for a range
of photocurrent levels. The results confirm that the photocurrent dependence of the
third-order output intercept point (OIP3) as determined by the three-tone method is
directly related to the dependence of ${\cal R}({\bf V})$ on photocurrent. The measured
OIP3 show a weak dependence on frequency and a high value of 47.5 dBm at 20 GHz is
achieved.
© 2010 IEEE
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