Abstract
The soft turn-on of semiconductor lasers leads to uncertainty in defining and
measuring the laser threshold injection current, ${I}_{\rm th}$. Previously, practical calculation algorithms have been developed
to achieve high-accuracy measurement of a clearly defined and reproducible
quantity which is called ${I}_{\rm th}$. We demonstrate a new and higher accuracy measurement of ${I}_{\rm th}$ using the dependency of the relaxation oscillation frequency on
injection current, as compared to the existing standardized approaches.
Further, if it is accepted that relaxation oscillations do not occur below
laser threshold, this may be regarded as a more fundamentally based
definition and measurement method to determine the laser threshold injection
current in a semiconductor laser. The method may also be applicable to other
types of lasers.
© 2009 IEEE
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