Abstract

A semiconductor laser with a strongly asymmetric waveguide structure and a relatively thick ($\sim$0.1 $\mu$m) active layer, resulting in an extremely large equivalent spot size, is proposed and analyzed for the purpose of generating high-power single-optical pulses by gain switching. An improvement in obtainable single-pulse energies of about an order of magnitude over conventional laser structures is predicted.

© 2009 IEEE

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