Abstract

Modulated infrared electroluminescence from organic light-emitting diodes (OLEDs) based on rare earth complexes (tris-dibenzoylmethanato-mono-bathophenanthroline) erbium or neodymium were fabricated. The modulations were realized by varying the device configuration and by varying an applied forward bias at room temperature. We found that the intensity of EL peak at 1.54 $\mu{\rm m}$ was reduced by a factor of almost 20 times as the Nd complex layer thickness in the OLEDs was increased from 1 nm to 5 nm. The intensity ratio of the 1.54 $\mu{\rm m}$ (Nd) to 1.06 $\mu{\rm m}$ (Er) decreases from 0.82 to 0.53 as the forward bias increases from 6.5 V to 18 V. The effects of the modulation of these IR emissions were also discussed.

© 2009 IEEE

1.54 μm electroluminescence from p-Si anode organic light emitting diode with Bphen: Er(DBM)₃phen as emitter and Bphen as electron transport material

F. Wei, Y. Z. Li, G. Z. Ran, and G. G. Qin
Opt. Express 18(13) 13542-13546 (2010)

Polarized electroluminescence from organic light-emitting devices using photon recycling

Byoungchoo Park, Yoon Ho Huh, and Hong Goo Jeon
Opt. Express 18(19) 19824-19830 (2010)

Enhanced electroluminescence of an organic light-emitting diode by localized surface plasmon using Al periodic structure

Roberto Fernandez Garcia, Lei Zeng, Samira Khadir, Mahmoud Chakaroun, Alexis P. A. Fischer, and Azzedine Boudrioua
J. Opt. Soc. Am. B 33(2) 246-252 (2016)

Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode

C. Baratto, R. Kumar, E. Comini, G. Faglia, and G. Sberveglieri
Opt. Express 23(15) 18937-18942 (2015)

Analysis of thermal degradation of organic light-emitting diodes with infrared imaging and impedance spectroscopy

Kiyeol Kwak, Kyoungah Cho, and Sangsig Kim
Opt. Express 21(24) 29558-29566 (2013)