Abstract
Optically pumped GaN-based vertical cavity surface-emitting laser (VCSEL)
with two Ta$_{2}$O$_{5}$/SiO$_{2}$ dielectric distributed
Bragg reflectors (DBRs) was fabricated via a simplified procedure: direct
deposition of the top DBR onto the GaN surface exposed after substrate removal
and no use of etching and polishing processes. Blue-violet lasing action was
observed at a wavelength of 397.3 nm under optical pumping at room temperature
with a threshold pumping energy density of about 71.5mJ/cm$^{2}$. The laser action
was further confirmed by a narrow emission linewidth of 0.13 nm and a degree
of polarization of about 65%. The result suggests that practical blue-violet
GaN-bsaed VCSEL can be realized by optimizing the laser lift-off technique
for substrate removal.
© 2009 IEEE
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