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Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 26,
  • Issue 3,
  • pp. 338-342
  • (2008)

Monothically Integrated Long-Wavelength Tunable Photodetector

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Abstract

This paper demonstrated a tunable long-wavelength photodetector by using the heteroepitaxy growth of InP-In<sub>0.53</sub>Ga<sub>0.47</sub>As-InP p-i-n structure on a GaAs-based GaAs/AlAs Fabry–Pérot filter structure. High-quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. A wavelength tuning range of 10.0 nm, an external quantum efficiency of about 23%, a spectral linewidth of 0.8 nm, and a 3-dB bandwidth of 6.2 GHz were simultaneously obtained in the device.

© 2008 IEEE

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