Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 26,
  • Issue 15,
  • pp. 2679-2683
  • (2008)

An InP HBT-Based Oscillator Monolithically Integrated With a Photodiode

Not Accessible

Your library or personal account may give you access

Abstract

An indium phosphide heterojunction bipolar transistor (InP HBT) oscillator chip was monolithically integrated with an on chip p-i-n photodiode. A controllable locking range was obtained in unidirectional injection locking. High-purity optoelectronic oscillator with parasitic modes lower than - 43 dBc resulted from bidirectional injection locking. The optoelectronic oscillator power consumption was 50 mW while providing output power of - 2 dBm. The overall chip size is 1.3 x 0.8 mm.

© 2008 IEEE

PDF Article
More Like This
High-speed photodiodes for InP-based photonic integrated circuits

E. Rouvalis, M. Chtioui, M. Tran, F. Lelarge, F. van Dijk, M. J. Fice, C. C. Renaud, G. Carpintero, and A. J. Seeds
Opt. Express 20(8) 9172-9177 (2012)

170 GHz uni-traveling carrier photodiodes for
InP-based photonic integrated circuits

E. Rouvalis, M. Chtioui, F. van Dijk, F. Lelarge, M. J. Fice, C. C. Renaud, G. Carpintero, and A. J. Seeds
Opt. Express 20(18) 20090-20095 (2012)

InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation

Andreas Beling, Allen S. Cross, Molly Piels, Jon Peters, Qiugui Zhou, John E. Bowers, and Joe C. Campbell
Opt. Express 21(22) 25901-25906 (2013)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved