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Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 18,
  • Issue 4,
  • pp. 555-
  • (2000)

Characterization of Defects in Waveguides Formed by Electron Irradiation of Silica-on-Silicon

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Abstract

Absorption spectroscopy and electron spin resonance are used to characterize optical waveguides formed by electron irradiation of plasma-enhanced chemical vapor deposition (PECVD) silica-on-silicon. Nonbridging oxygen hole centers and E' defect centers are positively identified in undoped films. Evidence for peroxy radical and phosphorus oxygen hole centers is also found in phosphorus-doped samples. This is the first time that defects have been unambiguously identified in such guides. The charge-dose dependence of the E' center density follows a saturating exponential curve well correlated with refractive index changes previously reported, implying that a single first order process is responsible for both effects.

[IEEE ]

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