It is possible to grow defect-free strained layers on patterned substrates (mesas or grooves) up to thicknesses far exceeding the critical thickness. Defect nucleation and propagation are inhibited in such growth. We have exploited this property to propose a novel InP-based 1.55-m vertical cavity surface emitting lasers (VCSEL's). Careful photoluminescence and transmission electron microscopy (TEM) studies have confirmed that there are no propagating defects in the GaAs/AlxGa1-xAs distributed Bragg reflector (DBR) grown on the patterned InP-based heterostructures, specifically in the multiquantum-well (MQW) region. Lasers were designed with InP/InGaAsP bottom mirrors, InAlAs-oxide current confinement and short-stack GaAs/AlxOy top DBR mirrors. An optimal reflectivity and a maximum wall plug efficiency are determined analytically for this structure. In addition, a theoretical analysis of the modulation response of this device is performed using a rate equation model. Both analyzes show the potential of such a device for implementation in practical designs where high power and modulation bandwidth are required. Lasers with 8-40 m diameter have been fabricated and characterized. A threshold current of 5 mA is observed at 15C for an 8 m diameter device; and up to 60 W of light output is recorded.


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