Abstract

Semiconductor-based three-dimensional (3-D) photonic crystals are developed by utilizing a wafer fusion and alignment technique. A clear and considerable bandgap effect is successfully demonstrated in infrared to near-infrared wavelengths. It is pointed out that the introduction of arbitrary defect states and/or efficient light emitters can be possible in this method. For the example of the introduction of a light-emitting element, a surface-emitting laser with a two-dimensional (2-D) photonic crystal structure is fabricated, and very unique lasing characteristics are demonstrated. These results encourage us very much for the development of various quantum optical devices and circuits including not only passive, but also active devices.

[IEEE ]

1.3-µm optically-pumped semiconductor disk laser by wafer fusion

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Iterative bandgap engineering at selected areas of quantum semiconductor wafers

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