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Optica Publishing Group
  • Journal of Lightwave Technology
  • Vol. 16,
  • Issue 8,
  • pp. 1498-
  • (1998)

Waveguiding in Vertical Cavity Quantum-Well Structure Defined by Ion Implantation

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Abstract

A theoretical model is presented for investigating AlGaAs/GaAs quantum-well (QW) vertical cavity waveguides defined by impurity-induced disordering. This model is based on a two-dimensional (2-D) description of the implantation profile to produce quantum-well intermixing. The modal propagation constant, power, and field evolution along the nonuniform circular waveguide is analyzed in terms of the coupled-mode equation. The influence of varying the mask dimension and length of cavity on the fundamental mode operation is studied. In a long cavity, guided mode can be supported by using higher implantation energy, however, a larger mask diameter should be used to maintain strong guiding. Result shows that optical lateral confinement is accomplished, with more than 70% of the power gathered in the cavity. The fraction of power confined in the waveguide is shown to improve by 30% after annealing. In addition, waveguide loss is estimated to be less than 40 cm-1 which results in less than 1 dB for our structure.

© 1998 IEEE

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