This paper discusses the degradation behaviors and reliability of spot-size converter integrated laser diodes fabricated using the full wafer process with dry etching and metal organic vapor phase epitaxy (MOVPE). Failure criteria applicable to actual access networks were determined based on the degradation behavior exhibited in several aging tests, and device lifetimes were then estimated. The far-field patterns and wide-temperature operation required for low-cost system application scarcely changed during degradation, even after a 150% increase in threshold current. Within this degradation range, the device life for system application is estimated to be more than 105 h at 60C and 10 mW.


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