Abstract
The effect of post-deposition annealing temperature on the pH sensitivity
of room temperature RF sputtered
${{Ta}}_{2}{{O}}_{5}$
was investigated. Structural and morphological features of these
films were analyzed before and after annealing at various temperatures. The
deposited films are amorphous up to 600
$^{\circ}{{C}}$
and crystallize at 700
$^{\circ}{{C}}$
in
an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect
based sensors with an amorphous
${{Ta}}_{2}{{O}}_{5}$
sensing layer showed pH sensitivity above 50 mV/pH. For sensors
annealed above 200
$^{\circ}{{C}}$
pH sensitivity decreased with increasing temperature. Stabilized
sensor response and maximum pH sensitivity was achieved after low temperature
annealing at 200
$^{\circ}{{C}}$
, which is compatible with the use of polymeric substrates and application
as sensitive layer in oxides TFT-based sensors.
© 2012 IEEE
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