Abstract
We propose a method to evaluate the electrical properties of nanoscale
layered materials. This study is important for the potential application of
these structures in light emitting diode electrodes. For this purpose we measure
the reflection coefficient of a microwave signal recorded by a near-field
Scanning Microwave Microscope. This method allows the non-contact measurement
of the sheet resistance of the material under analysis. It provides detailed
maps of the electrical properties of a micrometric area under test to assay
its uniformity. In particular, we have applied this technique to a multilayer
material composed by an Indium–Tin–Oxide film and few layer graphene.
© 2013 IEEE
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