Abstract

We report the observation of electroluminescence from the first to fourth quantum wells (QWs) from the <i>p</i>-GaN layer in InGaN/GaN multiple-QW light-emitting diodes (LEDs) with various indium contents (4%–16%) in each QW. The investigated LED sample showed a lower turn-on voltage and ideality factor as well as a reduction of etching pit density compared with the reference sample. Also, the X-ray reciprocal space maps revealed a partial strain relaxation in the active region. The enhanced hole injection efficiency was attributed to the weakening of strain-induced polarization field in the QWs and the good crystalline quality.

© 2013 IEEE

InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes

Shengjun Zhou, Zehong Wan, Yu Lei, Bin Tang, Guoyi Tao, Peng Du, and Xiaoyu Zhao
Opt. Lett. 47(5) 1291-1294 (2022)

InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes

Chun-Ta Yu, Wei-Chih Lai, Cheng-Hsiung Yen, and Shoou-Jinn Chang
Opt. Mater. Express 3(11) 1952-1959 (2013)

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

Hung-Ming Chang, Wei-Chih Lai, Wei-Shou Chen, and Shoou-Jinn Chang
Opt. Express 23(7) A337-A345 (2015)

Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers

Kwang Jae Lee, Sang-Jo Kim, Jae-Joon Kim, Kyungwook Hwang, Sung-Tae Kim, and Seong-Ju Park
Opt. Express 22(S4) A1164-A1173 (2014)

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

Yun Ji, Zi-Hui Zhang, Swee Tiam Tan, Zhen Gang Ju, Zabu Kyaw, Namig Hasanov, Wei Liu, Xiao Wei Sun, and Hilmi Volkan Demir
Opt. Lett. 38(2) 202-204 (2013)